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BUK9237-55A
N-channel TrenchMOS logic level FET
Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Q101 compliant Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK9237-55A
N-channel TrenchMOS logic level FET
Rev. 3 — 9 November 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source
voltage≥25 °C; Tj≤ 175°C --55 V drain current VGS =5V; Tmb =25°C;
see Figure 1; see Figure 3
--32 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --77 W
Static characteristicsRDSon drain-source
on-state
resistance
VGS =10V; ID =15A; =25°C 2833mΩ
VGS =5V; ID =15A; =25°C; see Figure 11;
see Figure 12 3137mΩ
NXP Semiconductors BUK9237-55A
N-channel TrenchMOS logic level FET Pinning information[1] It is not possible to make connection to pin 2 of the SOT428 package.
Ordering information
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =32A; Vsup≤30V;
RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped
--76 mJ
Dynamic characteristicsQGD gate-drain charge VGS =5V; ID =15A;
VDS =44 V; Tj =25°C;
see Figure 13
-9.2 -nC
Table 1. Quick reference data …continued
Table 2. Pinning information G gate
SOT428 (DPAK) D drain[1] source D mounting base; connected to
drain
Table 3. Ordering informationBUK9237-55A DPAK plastic single-ended surface-mounted package (DPAK); leads (one lead cropped)
SOT428
NXP Semiconductors BUK9237-55A
N-channel TrenchMOS logic level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -15 15 V drain current Tmb =25°C; VGS =5V; see Figure 1;
see Figure 3
-32 A
Tmb =100 °C; VGS =5V; see Figure 1 -22 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed;
see Figure 3 129 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -77 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 32 A
ISM peak source current tp≤10 µs; pulsed; Tmb=25°C - 129 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =32A; Vsup≤30 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped
-76 mJ
NXP Semiconductors BUK9237-55A
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 1.94 K/W
Rth(j-a) thermal resistance from junction to ambient - 71.4 - K/W
NXP Semiconductors BUK9237-55A
N-channel TrenchMOS logic level FET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 55 --V
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj= -55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 10
11.5 2V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--2.3 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10
0.5 --V
IDSS drain leakage current VDS =55V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =55V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VDS =0V; VGS =10V; Tj=25°C - 2 100 nA
VDS =0V; VGS =-10 V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =15A; Tj=25°C --38 mΩ
VGS =5V; ID =15A; Tj= 175 °C;
see Figure 11; see Figure 12
--74 mΩ
VGS =10V; ID =15A; Tj=25°C - 28 33 mΩ
VGS =5V; ID =15A; Tj =25 °C;
see Figure 11; see Figure 12 3137mΩ
Dynamic characteristicsQG(tot) total gate charge ID =15A; VDS =44V; VGS =5V; =25°C; see Figure 13 17.6 - nC
QGS gate-source charge - 2.9 - nC
QGD gate-drain charge - 9.2 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 14 927 1236 pF
Coss output capacitance - 151 181 pF
Crss reverse transfer
capacitance 96 131 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C -ns rise time - 36 - ns
td(off) turn-off delay time - 95 - ns fall time - 73 - ns internal drain
inductance
measured from drain to centre of die - 2.5 - nH internal source
inductance
measured from source lead to source
bond pad
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; Tj =25°C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-42 - ns recovered charge - 83 - nC
NXP Semiconductors BUK9237-55A
N-channel TrenchMOS logic level FETNXP Semiconductors BUK9237-55A
N-channel TrenchMOS logic level FET
