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BUK9107-40ATC |BUK910740ATCPHILIPSN/a800avaiTrenchPLUS logic level FET


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BUK9107-40ATC
TrenchPLUS logic level FET
BUK9107-40A TC renchPLUS logic level FET
Rev. 03 — 22 January 2002 Product data

M3D322 Description
N-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9107-40ATC in SOT426(D2 -PAK). Features Typical on-state resistance 5.8 mΩ Q101 compliant ESD and overvoltage protection Monolithically integrated temperature sensor for overload protection. Applications Automotive and power switching: 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS)) Protected drive for lamps. Pinning information
Table 1: Pinning - SOT426, simplified outline and symbol
gate (g)
SOT426 (D2 -PAK)
anode (a) drain (d) cathode (k) source (s) mounting base;
connected to drain (d) Front view MBK127
MBL306
Philips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET Quick reference data
Table 2: Quick reference data

VDSR(CL) drain-source clamping voltage Tj =25 °C; IGS(CL)=−2 mA; ID =1A 50 - V drain current (DC) Tmb =25 °C; VGS=5V - 140 A
Ptot total power dissipation Tmb =25°C - 272 W junction temperature - 175 °C
RDSon drain-source on-state resistance Tj =25 °C; VGS =5V; ID =50A 5.8 7 mΩ =25 °C; VGS= 4.5 V; ID =50A 6 7.7 mΩ =25 °C; VGS=10 V; ID=50A 5.2 6.2 mΩ temperature sense diode forward
voltage =25 °C; IF= 250μA 658 668 mV temperature sense diode temperature
coefficient
−55 °CPhilips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET Limiting values

[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.
Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) [1] -40 V
VDGS drain-gate voltage (DC) IDG= 250μA [1] -40 V
VGS gate-source voltage (DC) [1] - ±15 V drain current (DC) Tmb =25 °C; VGS =5V;
Figure2 and3
[2] - 140 A
[3] -75 A
Tmb= 100 °C; VGS =5V; Figure2 [3] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 560 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 272 W
IDG(CL) drain-gate clamping current tp=5 ms;δ= 0.01 - 50 mA
IGS(CL) gate-source clamping current continuous - 10 mA=5 ms;δ= 0.01 - 50 mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage ±100 V
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diode

IDR reverse drain current (DC) Tmb =25°C [2] - 140 A
[3] -75 A
IDRM pulsed reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 560 A
Clamping

EDS(CL)S non-repetitive drain-source clamping
energy
unclamped inductive load; ID =75A;
VDS≤40 V; VGS =5V; RGS =10kΩ;
starting Tj =25°C 1.4 J
Electrostatic discharge

Vesd electrostatic discharge voltage; pins3,5
Human Body Model; C= 100 pF;= 1.5kΩ kV
Philips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET
Philips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics

Rth(j-a) thermal resistance from junction to
ambient
mounted on printed circuit board;
minimum footprint; SOT426 package - 50 K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.55 K/W
Philips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET Characteristics
Table 5: Characteristics
=25 °C unless otherwise specified.
Static characteristics

V(BR)DG drain-gate zener breakdown
voltage= 0.25 mA; VGS =0V =25 °C40 - - V= −55 °C40 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 1 1.5 2 V= 175°C 0.5 - - V= −55°C - - 2.3 V
IDSS drain-source leakage current VDS=40 V; VGS =0V =25°C - 0.1 100 μA= 175°C - - 250 μA
V(BR)GSS gate-source breakdown
voltage=±1 mA;
−55 °CIGSS gate-source leakage current VGS=±5 V; VDS=0V - 5 1000 nA
RDSon drain-source on-state
resistance
VGS =5V; ID =50A;
Figure7 and8 =25°C - 5.8 7 mΩ= 175 °C- - 14 mΩ
VGS= 4.5 V; ID =50A - 6 7.7 mΩ
VGS =10V; ID=50A - 5.2 6.2 mΩ temperature sense diode
forward voltage
IF= 250μA 648 658 668 mV temperature sense diode
temperature coefficient
IF= 250 μA;
−55 °C−1.4 −1.54 −1.68 mV/K
Vhys temperature sense diode
forward voltage hysteresis
125 μA
Dynamic characteristics
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 5836 - pF
Coss output capacitance - 958 - pF
Crss reverse transfer capacitance - 595 - pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =5V; RG =1kΩ - μs rise time - 10 - μs
td(off) turn-off delay time - 17 - μs fall time - 11 - μs internal drain inductance measured from upper edge
of drain mounting base to
centre of die 2.5 - nH
Philips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET
internal source inductance measured from source lead
to source bond pad 7.5 - nH
Source-drain diode

VSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure19 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-85 - ns recovered charge - 250 - nC
Table 5: Characteristics…continued
=25 °C unless otherwise specified.
Philips Semiconductors BUK9107-40A TC
TrenchPLUS logic level FET
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