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BUK790540AIROHMN/a1500avaiN-channel TrenchPLUS standard level FET


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BUK790540AI
N-channel TrenchPLUS standard level FET
BUK7905-40AI
N-channel TrenchPLUS standard level FET
Rev. 02 — 16 February 2009 Product data sheet Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current
sensing. This product has been designed and qualified to the appropriate AEC standard
for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Q101 compliant Reduced component count due to
integrated current sensor Suitable for standard level gate drive
sources
1.3 Applications Electrical Power Assisted Steering
(EPAS) Variable Valve Timing for engines
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 40 V drain current VGS =10V; Tmb =25°C;
see Figure 2; see Figure 3;
[1] - - 155 A
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =50A; =25 °C; see Figure 7; see
Figure 8
-4.5 5 mΩ
ID/Isense ratio of drain current
to sense current >-55 °C; VGS >10V; <175°C
450 500 550
NXP Semiconductors BUK7905-40AI
N-channel TrenchPLUS standard level FET Pinning information Ordering information
Table 2. Pinning information gate
SOT263B
(TO-220) ISENSE current sense drain KS Kelvin source source D mounting base; connected to
drain245
Table 3. Ordering information
BUK7905-40AI TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead
TO-220
SOT263B
NXP Semiconductors BUK7905-40AI
N-channel TrenchPLUS standard level FET Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 40 V
VDGR drain-gate voltage RGS =20kΩ -40 V
VGS gate-source voltage -20 20 V drain current Tmb =25°C; VGS =10V; see Figure 2;
see Figure 3;
[1] -155 A
[2] -75 A
Tmb =100 °C; VGS=10 V; see Figure 2; [2] -75 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed; see Figure 3 -620 A
Ptot total power dissipation Tmb =25°C; see Figure 1 -272 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C; [1] -155 A
[2] -75 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 620 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy =75A; Vsup≤40 V; RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
-1.46 J
Electrostatic discharge
Vesd electrostatic discharge
voltage
HBM; C= 100 pF; R= 1.5kΩ -4 kV
NXP Semiconductors BUK7905-40AI
N-channel TrenchPLUS standard level FET
NXP Semiconductors BUK7905-40AI
N-channel TrenchPLUS standard level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 - - 0.55 K/W
NXP Semiconductors BUK7905-40AI
N-channel TrenchPLUS standard level FET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj =25°C 40 - - V =0.25mA; VGS =0V; Tj =-55°C 36 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =25°C; see
Figure 9
234 V =1mA; VDS = VGS; Tj= 175 °C; see
Figure 9 - V =1mA; VDS = VGS; Tj =-55 °C; see
Figure 9
--4.4 V
IDSS drain leakage current VDS =40V; VGS =0V; Tj =25°C - 0.1 10 µA
VDS =40V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VDS =0V; VGS =20V; Tj=25°C - 2 100 nA
VDS =0V; VGS =-20 V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =50A; Tj =25°C; see
Figure 7; see Figure 8
-4.5 5 mΩ
VGS =10V; ID =50A; Tj= 175 °C; see
Figure 7; see Figure 8
--9.5 mΩ
ID/Isense ratio of drain current to
sense current
VGS >10V; Tj >-55 °C; Tj< 175°C 450 500 550
R(D-ISENSE)on drain-ISENSE on-state
resistance
VGS =10V; ID =25mA; Tj =25 °C; see
Figure 16
0.98 1.08 1.18 Ω
VGS =10V; ID =25mA; Tj= 175 °C; see
Figure 16
1.86 2.05 2.24 Ω
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =32V; VGS =10V; =25°C; see Figure 14 120 127 nC
QGS gate-source charge - 19 22 nC
QGD gate-drain charge - 50 60 nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 12 4300 5000 pF
Coss output capacitance - 1400 1670 pF
Crss reverse transfer
capacitance 820 1100 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-35 - ns rise time - 115 - ns
td(off) turn-off delay time - 155 - ns fall time - 110 - ns internal drain
inductance
measured from upper edge of drain
mounting base to center of die; Tj =25°C
-2.5 - nH internal source
inductance
measured from source lead to source
bond pad; Tj =25°C
-7.5 - nH
NXP Semiconductors BUK7905-40AI
N-channel TrenchPLUS standard level FET
Source-drain diode
VSD source-drain voltage IS =40A; VGS =0V; Tj=25 °C; see
Figure 17 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =-10V;
VDS =30V; Tj =25°C
-96 - ns recovered charge - 224 - nC
Table 6. Characteristics …continued
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