BUK7880-55A Fast Delivery |IC PHOENIX CO.,LIMITED

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BUK7880-55A
TrenchMOS transistor standard level FET
Philips Semiconductors Product specification
TrenchMOS transistor BUK7880-55
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistorina
plastic envelope suitable for surface VDS Drain-source voltage 55 V
mounting. Using ’trench’ technolgy ID Drain current 7.5 A
the device features very low on-state Ptot Total power dissipation 1.8 W
resistance and has integral zener Tj Junction temperature 150 ˚C
diodes giving ESD protection.Itis RDS(ON) Drain-source on-state 80 mΩ
intended for usein automotive and resistance VGS = 10 V
general purpose switching
applications.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION gate drain source drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kΩ -55 V
±VGS Gate-source voltage - - 16 V Drain current (DC) Tsp = 25 ˚C - 7.5 A Drain current (DC) On PCB in Fig.2 - 3.5 A
Tamb = 25 ˚C Drain current (DC) On PCB in Fig.2 - 2.2 A
Tamb = 100 ˚C
IDM Drain current (pulse peak value) Tsp = 25 ˚C - 40 A
Ptot Total power dissipation Tsp = 25 ˚C - 8.3 W
Ptot Total power dissipation On PCB in Fig.2 - 1.8 W
Tamb = 25 ˚C
Tstg, Tj Storage & operating temperature - - 55 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge capacitor Human body model - 2 kV
voltage (100 pF, 1.5 kΩ)
Philips Semiconductors Product specification
TrenchMOS transistor BUK7880-55
Standard level FET
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-sp From junction to solder point Mounted on any PCB 12 15 K/W
Rth j-amb From junction to ambient Mounted on PCB of Fig.18 - 70 K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 55 - - V
voltage Tj = -55˚C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 150˚C 1.2 - - Vj = -55˚C - - 4.4DSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 μA
Tj = 150˚C - - 100 μA
IGSS Gate source leakage current VGS = ±10 V - 0.04 1 μA
Tj = 150˚C - - 10 μA
±V(BR)GSS Gate-source breakdown IG = ±1 mA; 16 - - V
voltage DS(ON) Drain-source on-state VGS = 10 V; ID = 5 A - 65 80 mΩ
resistance Tj = 150˚C - - 148 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 5 A; Tj = 25˚C 1 4 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 365 500 pF
Coss Output capacitance - 110 135 pF
Crss Feedback capacitance - 60 85 pF
td on Turn-on delay time VDD = 30 V; ID = 7 A; - 9 14 nsr Turn-on rise time VGS = 10 V; RG = 10 Ω; - 15 25 ns
td off Turn-off delay time - 18 27 ns Turn-off fall time Tj = 25˚C - 12 18 ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain Tsp = 25˚C - - 7.5 A
current
IDRM Pulsed reverse drain current Tsp = 25˚C - - 40 A
VSD Diode forward voltage IF = 5 A; VGS = 0 V - 0.85 1.1 V
trr Reverse recovery time IF = 5 A; -dIF/dt = 100 A/μs; - 38 - ns
Qrr Reverse recovery charge VGS = -10 V; VR = 30 V - 0.2 - μC
Philips Semiconductors Product specification
TrenchMOS transistor BUK7880-55
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
WDSS Drain-source non-repetitive ID = 2.5 A; VDD ≤ 25 V; - - 30 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
energy
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tsp)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. Tsp = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Zth j-sp = f(t); parameter D = tp/T 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating120
110
100
90
80
70
60
50
40
30
20
10 10 1000.1
VDS/V
RDS(ON) = VDS/ID
ID/A 20 40 60 80 100 120 140
Tmb / C
ID% Normalised Current Derating120
110
100
90
80
70
60
50
40
30
20
10
1.0E-06 0.0001 0.01 1 1000.01
100 Zth/ (K/W)
t/s
Philips Semiconductors Product specification
TrenchMOS transistor BUK7880-55
Standard level FET
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
Fig.10. Gate threshold voltage. 46 8 100
ID/A
VDS/V
4.54.0 5 10 15 202
gfs/S
ID/A 5 10 15 20 25 3060
130 RDS(ON)/mOhm
ID/A
-100 -50 0 50 100 150 200
Tmb / degC
Rds(on) normalised to 25degCa 234567890
ID/A
VGS/V
-100 -50 0 50 100 150 2000
Tj / C
Philips Semiconductors Product specification
TrenchMOS transistor BUK7880-55
Standard level FET
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tsp); conditions: ID = 2.5 A
Fig.16. Avalanche energy test circuit. 23 451E-06
1E-05
1E-04
1E-03
1E-02
1E-01 Sub-Threshold Conduction 0.5 1 1.5 20
IF/A
VSDS/V
0.01 0.1 1 10 100
Thousands pF
VDS/V
Ciss
CossCrss 20 40 60 80 100 120 140
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
WDSS% 5 10 150
VDS/V
QG/nC
T.U.T.
VDD
VGS=0.5 ⋅LI⋅BV /(BV −V)
Philips Semiconductors Product specification
TrenchMOS transistor BUK7880-55
Standard level FET
Fig.17. Switching test circuit.
VDDVGS

Partno	Mfg	Dc	Qty	Available	Descript
BUK7880-55A \|BUK788055A	PHILIPS	N/a	500	avai	TrenchMOS transistor standard level FET