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BUK7620-100A |BUK7620100APHN/a625avaiN-channel TrenchMOS standard level FET


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BUK7620-100A
N-channel TrenchMOS standard level FET
Product profile1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low
on-state resistance Suitable for standard level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data

BUK7620-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 2 February 2011 Product data sheet
Table 1. Quick reference data

VDS drain-source
voltage≥25 °C; Tj≤ 175°C - - 100 V drain current VGS =10V; Tmb =25°C;
see Figure 1; see Figure 3
--63 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --200 W
Static characteristics

RDSon drain-source
on-state
resistance
VGS =10V; ID =25A; = 175 °C; see Figure 12;
see Figure 13
--50 mΩ
VGS =10V; ID =25A; =25°C; see Figure 12;
see Figure 13 1720mΩ
Avalanche ruggedness

EDS(AL)S non-repetitive
drain-source
avalanche energy =60A; Vsup≤ 100V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--400 mJ
NXP Semiconductors BUK7620-100A
N-channel TrenchMOS standard level FET Pinning information
Ordering information
Table 2. Pinning information
G gate
SOT404 (D2PAK)
D drain source D mounting base; connected to
drain
Table 3. Ordering information

BUK7620-100A D2PAK plastic single-ended surface-mounted package (D2PAK); leads (one lead cropped)
SOT404
NXP Semiconductors BUK7620-100A
N-channel TrenchMOS standard level FET Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current Tmb =25°C; VGS =10V;
see Figure 1; see Figure 3
-63 A
Tmb =100 °C; VGS=10 V; see Figure 1 -44 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 253 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 200 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode
source current Tmb =25°C - 63 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 253 A
Avalanche ruggedness

EDS(AL)S non-repetitive drain-source
avalanche energy =60A; Vsup≤ 100 V; RGS =50Ω;
VGS =10V; Tj(init)=25 °C; unclamped 400 mJ
NXP Semiconductors BUK7620-100A
N-channel TrenchMOS standard level FET Thermal characteristics

Table 5. Thermal characteristics

Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 --0.75 K/W
Rth(j-a) thermal resistance from
junction to ambient
mounted on a printed-circuit board;
minimum footprint
-50 - K/W
NXP Semiconductors BUK7620-100A
N-channel TrenchMOS standard level FET Characteristics

Table 6. Characteristics
Static characteristics

V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 100 - - V =0.25mA; VGS =0V; Tj= -55°C 89 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 11
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.4 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =100 V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 12; see Figure 13
--50 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 12; see Figure 13 1720mΩ
Dynamic characteristics

Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 14 3430 4373 pF
Coss output capacitance - 440 525 pF
Crss reverse transfer
capacitance 260 352 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-21 - ns rise time - 87 - ns
td(off) turn-off delay time - 108 - ns fall time - 56 - ns internal drain
inductance
from upper edge of drain mounting base
to centre of die; Tj =25°C
-2.5 -nH
from drain lead 6 mm from package to
centre of die; Tj =25°C
-4.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diode

VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-76 - ns recovered charge - 282 - nC
NXP Semiconductors BUK7620-100A
N-channel TrenchMOS standard level FET
NXP Semiconductors BUK7620-100A
N-channel TrenchMOS standard level FET
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