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Partno	Mfg	Dc	Qty	Available	Descript
BUK753R1-40B |BUK753R140B	NXP	N/a	20	avai	N-channel TrenchMOS standard level FET

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BUK753R1-40B
N-channel TrenchMOS standard level FET
Product profile1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low
on-state resistance Suitable for standard level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK753R1-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 8 February 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source
voltage≥25 °C; Tj≤ 175°C --40 V drain current VGS =10V; Tmb =25°C;
see Figure 3; see Figure 1
[1] --75 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --300 W
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; ID =25A; =25°C; see Figure 11;
see Figure 12
-2.6 3.1 mΩ
NXP Semiconductors BUK753R1-40B
N-channel TrenchMOS standard level FET
[1] Continuous current is limited by package. Pinning information Ordering information
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy =75A; Vsup≤40V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--1.6 J
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A;
VDS =32 V; Tj =25°C;
see Figure 13
-29 - nC
Table 1. Quick reference data …continued
Table 2. Pinning information G gate
SOT78A (TO-220AB) D drain source D mounting base; connected to
drain
Table 3. Ordering information
BUK753R1-40B TO-220AB plastic single-ended package; heatsink mounted; mounting hole; 3-lead TO-220AB
SOT78A
NXP Semiconductors BUK753R1-40B
N-channel TrenchMOS standard level FET Limiting values
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 40 V
VDGR drain-gate voltage RGS =20kΩ -40 V
VGS gate-source voltage -20 20 V drain current Tmb =100 °C; VGS=10 V; see Figure 1 [1] -75 A
Tmb =25°C; VGS =10V; see Figure 3;
see Figure 1
[2]- 225 A
[1] -75 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 902 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 300 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [2]- 225 A
[1] -75 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 902 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy =75A; Vsup≤40 V; RGS =50Ω;
VGS =10V; Tj(init)=25 °C; unclamped
-1.6 J
NXP Semiconductors BUK753R1-40B
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 --0.5 K/W
Rth(j-a) thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
NXP Semiconductors BUK753R1-40B
N-channel TrenchMOS standard level FET Characteristics
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 40 --V =0.25mA; VGS =0V; Tj= -55°C 36 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 10
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.4 V
IDSS drain leakage current VDS =40V; VGS =0V; Tj=25°C - 0.02 1 µA
VDS =40V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 11; see Figure 12
--5.9 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12
-2.6 3.1 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =32V; VGS =10V; =25°C; see Figure 13
-94 - nC
QGS gate-source charge - 18 - nC
QGD gate-drain charge - 29 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 14 5106 6808 pF
Coss output capacitance - 1390 1667 pF
Crss reverse transfer
capacitance 530 722 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-38 - ns rise time - 82 - ns
td(off) turn-off delay time - 141 - ns fall time - 90 - ns internal drain
inductance
from contact screw on mounting base to
center of die; Tj =25°C
-3.5 -nH
from drain lead 6 mm from package to
center of die; Tj =25°C
-4.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diode
VSD source-drain voltage IS =40A; VGS =0V; Tj =25°C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =20 V; Tj =25°C
-65 - ns recovered charge - 103 - nC
NXP Semiconductors BUK753R1-40B
N-channel TrenchMOS standard level FET
NXP Semiconductors BUK753R1-40B
N-channel TrenchMOS standard level FET

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