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BUK7510-100B
TrenchMOS(tm) standard level FET
BUK75/7610-100B renchMOS™ standard level FET
Rev. 02 — 19 September 2002 Product data Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
Philips High-Performance Automotive T renchMOS™ technology.
Product availability:
BUK7510-100B in SOT78 (TO-220AB)
BUK7610-100B in SOT404 (D2 -PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information[1] It is not possible to make connection to pin 2 of the SOT404 package. Very low on-state resistance � Q101 compliant 175 °C rated � Standard level compatible. Automotive systems � 12 V , 24V , and 42 V loads Motors, lamps and solenoids � General purpose power switching. EDS(AL)S≤ 629 mJ � RDSon= 8.6 mΩ (typ) ID≤75A � Ptot≤ 300W.
Table 1: Pinning - SOT78 and SOT404, simplified outlines and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2 -PAK) drain (d) [1] source (s) mounting base,
connected to
drain (d)
MBK106
MBB076
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 100 V
VDGR drain-gate voltage (DC) RGS =20kΩ - 100 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]- 110 A
[2] -75 A
Tmb= 100 °C; VGS =10V; Figure2 [2] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 438 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 300 W
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb =25°C [1]- 110 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 438 A
Avalanche ruggedness -EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75A;
VDS≤ 100 V; VGS =10V; RGS =50Ω;
starting Tmb =25°C 629 mJ
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.5 K/W
Rth(j-a) thermal resistance from junction to ambient
SOT78 vertical in still air - 60 - K/W
SOT404 mounted on a printed circuit board;
minimum footprint 50 - K/W
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25°C 100 - - V= −55 °C89 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 175 °C1 - - V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS= 100 V; VGS =0V =25°C - 0.02 1 μA= 175°C - - 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS=0V - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure7 and8 =25°C - 8.6 10 mΩ= 175 °C- - 25 mΩ
Dynamic characteristicsQg(tot) total gate charge VGS =10V; VDD =80V; =25A; Figure14
-80 - nC
Qgs gate-to-source charge - 18 - nC
Qgd gate-to-drain (Miller) charge - 22 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 5080 6773 pF
Coss output capacitance - 677 812 pF
Crss reverse transfer capacitance - 168 230 pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω
-33 - ns rise time - 45 - ns
td(off) turn-off delay time - 120 - ns fall time - 36 - ns internal drain inductance from drain lead 6 mm from
package to center of die 4.5 - nH
from contact screw on
mounting base to center of
die SOT78 3.5 - nH
from upper edge of drain
mounting base to center of
die SOT404 2.5 - nH internal source inductance from source lead to source
bond pad 7.5 - nH
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET
Source-drain diodeVSD source-drain (diode forward)
voltage=40 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-69 - ns recovered charge - 212 - nC
Table 4: Characteristics…continued =25 °C unless otherwise specified.
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET
Philips Semiconductors BUK75/7610-100B
TrenchMOS™ standard level FET
