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BUK7507-30B
N-channel TrenchMOS standard level FET
Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low
on-state resistance Suitable for standard level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data[1] Continuous current is limited by package.
BUK7507-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 30 V drain current VGS =10V; Tmb =25°C;
see Figure 1; see Figure 3
[1] --75 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --157 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25 °C; see Figure 11; see Figure 12
-5.9 7 mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche
energy =75 A; Vsup≤30V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--329 mJ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =24V; Tj =25°C;
see Figure 13
-12 - nC
NXP Semiconductors BUK7507-30B
N-channel TrenchMOS standard level FET Pinning information Ordering information
Table 2. Pinning information G gate
SOT78A (TO-220AB) D drain source D mounting base; connected to drain
Table 3. Ordering informationBUK7507-30B TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
NXP Semiconductors BUK7507-30B
N-channel TrenchMOS standard level FET Limiting values[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 30 V
VDGR drain-gate voltage RGS =20kΩ -30 V
VGS gate-source voltage -20 20 V drain current Tmb =100 °C; VGS =10V; see Figure 1 [1] -75 A
Tmb =25°C; VGS=10 V; see Figure 1;
see Figure 3
[2]- 108 A
[1] -75 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 435 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - 157 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1] -75 A
[2]- 108 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 435 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =75 A; Vsup≤30 V; RGS =50Ω;
VGS =10V; Tj(init)=25 °C; unclamped 329 mJ
NXP Semiconductors BUK7507-30B
N-channel TrenchMOS standard level FET
NXP Semiconductors BUK7507-30B
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 --0.95 K/W
Rth(j-a) thermal resistance from junction to
ambient
vertical in still air - - 60 K/W
NXP Semiconductors BUK7507-30B
N-channel TrenchMOS standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V; Tj=25°C 30 --V= 0.25 mA; VGS =0V; Tj= -55°C 27 - - V
VGS(th) gate-source threshold voltageID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 10
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.4 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj= 175°C - - 500 µA
VDS =30V; VGS =0V; Tj=25°C - 0.02 1 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25 A; Tj= 175 °C;
see Figure 11; see Figure 12 - 13.3 mΩ
VGS =10V; ID =25 A; Tj =25°C;
see Figure 11; see Figure 12
-5.9 7 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =25 A; VDS =24V; VGS =10V; =25°C; see Figure 13
-36 - nC
QGS gate-source charge - 9 - nC
QGD gate-drain charge - 12 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 14 1820 2427 pF
Coss output capacitance - 632 758 pF
Crss reverse transfer capacitance - 256 351 pF
td(on) turn-on delay time VDS =25V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-20 - ns rise time - 51 - ns
td(off) turn-off delay time - 51 - ns fall time - 44 - ns internal drain inductance from drain lead 6 mm from package to
centre of die; Tj =25°C
-4.5 -nH
from contact screw on mounting base
to centre of die; Tj =25°C
-3.5 -nH internal source inductance from source lead 6 mm from package
to source bond pad ; Tj =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0 V; Tj =25°C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =20V; Tj =25°C
-46 - ns recovered charge - 28 - nC
NXP Semiconductors BUK7507-30B
N-channel TrenchMOS standard level FET
