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BUK7212-55B |BUK721255BPHIN/a225avaiTrenchmos (tm) standard level FET


BUK7212-55B ,Trenchmos (tm) standard level FETApplications■ Automotive systems ■ 12 V and 24 V loads■ Motors, lamps and solenoids ■ General purpo ..
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BUK7212-55B
Trenchmos (tm) standard level FET
BUK7212-55B renchMOS™ standard level FET
Rev. 01 — 23 January 2004 Product data
M3D300 Product profile
1.1 Description

N-channel enhancement mode field-effect power transistorina plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information

[1] It is not possible to make connection to pin 2 of the SOT428 package. Very low on-state resistance � Q101 compliant 185°C rated � Standard level compatible. Automotive systems � 12 V and 24 V loads Motors, lamps and solenoids � General purpose power switching. EDS(AL)S≤ 173 mJ � RDSon= 10.2 mΩ (typ) ID≤75A � Ptot≤ 167W.
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
gate (g)
SOT428 (D-PAK)
drain (d) [1] source (s) mounting base;
connected to
drain (d)
MBK091Top view
MBB076
Philips Semiconductors BUK7212-55B
TrenchMOS™ standard level FET Ordering information Limiting values

[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 2: Ordering information

BUK7212-55B D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK);
3 leads (one lead cropped).
SOT428
Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS =20kΩ -55 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1] -83 A
[2] -75 A
Tmb= 100 °C; VGS =10V; Figure2 [1] -59 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 335 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 167 W
Tstg storage temperature −55 +185 °C junction temperature −55 +185 °C
Source-drain diode

IDR reverse drain current (DC) Tmb =25°C [1] -83 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 335 A
Avalanche ruggedness

EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load;ID =75A;
VDS≤55 V; VGS =10V;
RGS =50 Ω; starting Tj =25°C 173 mJ
Philips Semiconductors BUK7212-55B
TrenchMOS™ standard level FET
Philips Semiconductors BUK7212-55B
TrenchMOS™ standard level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics

Rth(j-a) thermal resistance from junction to
ambient 71.4 - K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.95 K/W
Philips Semiconductors BUK7212-55B
TrenchMOS™ standard level FET Characteristics
Table 5: Characteristics
=25 °C unless otherwise specified.
Static characteristics

V(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C55 - - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 185°C 0.9 - - V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS=55 V; VGS =0V =25°C - 0.02 1 μA= 185°C - - 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS=0V - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure7 and8 =25°C - 10.2 12 mΩ= 185 °C- - 25 mΩ
Dynamic characteristics

Qg(tot) total gate charge VGS =10V; VDS =44V; =25A; Figure14
-35 - nC
Qgs gate-source charge - 9 - nC
Qgd gate-drain (Miller) charge - 12 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 1840 2453 pF
Coss output capacitance - 379 455 pF
Crss reverse transfer capacitance - 165 226 pF
td(on) turn-on delay time VDS=25 V; RL= 1.2Ω;
VGS =10V; RG =10Ω
-18 - nS rise time - 91 - nS
td(off) turn-off delay time - 48 - nS fall time - 45 - nS internal drain inductance measured from drain to
center of die 2.5 - nH internal source inductance measured from source lead
to source bond pad 7.5 - nH
Source-drain diode

VSD source-drain (diode forward)
voltage=18 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-67 - ns recovered charge - 65 - nC
Philips Semiconductors BUK7212-55B
TrenchMOS™ standard level FET
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