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BUK7107-55ATE
TrenchPLUS standard level FET
BUK7107-55A TE renchPLUS standard level FET
Rev. 01 — 29 July 2002 Product dataM3D322
Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring both very low on-state resistance, and diode for
temperature sensing.
Product availability:
BUK7107-55ATE in SOT426(D2 -PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Integrated temperature sensor � Q101 compliant ESD protection � Standard level compatible Variable Valve Timing for engines � Electrical Power Assisted Steering Automotive and power switching � Fan control VDS=55V (max) � VF= 658 mV (typ) ID=75A (max) � SF= −1.54 mV/K (typ) RDSon= 5.8 mΩ (typ) � Ptot= 272W
Table 1: Pinning - SOT426 simplified outline and symbol gate (g)
SOT426 anode (a) drain (d) cathode (k) source (s) mounting base;
connected to drain (d)
Front view MBK127
MBL317
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 55 V
VDGS drain-gate voltage (DC) IDG= 250μA - 55 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]- 140 A
[2] -75 A
Tmb= 100 °C; VGS =10V; Figure2 [2] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 560 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 272 W
IGS(CL) gate-source clamping current continuous - 10 mA=5 ms;δ= 0.01 - 50 mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage ±100 V
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current Tmb =25°C [1]- 140 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 560 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =68A;
VDS≤55 V; VGS=10 V; RGS =50Ω;
starting Tj =25°C 460 mJ
Electrostatic DischargeVesd electrostatic discharge voltage; pins
1,3,5
Human Body Model; C= 100 pF;= 1.5kΩ
6kV
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient
SOT426 minimum footprint; mounted on a PCB - 50 - K/W
Rth(j-mb) thermal resistance from junctionto mounting
base
Figure4 - - 0.55 K/W
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V
Tj = 25°C55 - - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9
Tj = 25°C2 3 4 V= 175 °C1 - - V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS=55 V; VGS =0V
Tj = 25°C - 0.1 10 μA= 175°C - - 250 μA
V(BR)GSS gate-source breakdown
voltage=±1 mA;
−55°C
IGSS gate-source leakage current VGS= ±10 V; VDS =0V =25°C - 22 1000 nA= 175 °C- - 10 μA
RDSon drain-source on-state
resistance
VGS =10V; ID =50A;
Figure7 and8
Tj = 25°C - 5.8 7 mΩ= 175 °C- - 14 mΩ forward voltage, temperature
sense diode
IF= 250μA 648 658 668 mV temperature coefficient
temperature sense diode
IF= 250 μA;
−55°C−1.4 −1.54 −1.68 mV/K
Vhys temperature sense diode
forward voltage hysteresis
125 μA
Dynamic characteristics
Qg(tot) total gate charge VGS =10V; VDS =44V; =25A; Figure14 116 - nC
Qgs gate-source charge - 19 - nC
Qgd gate-to-drain (Miller) charge - 50 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 4500 - pF
Coss output capacitance - 960 - pF
Crss reverse transfer capacitance - 510 - pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω
-36 - ns rise time - 115 - ns
td(off) turn-off delay time - 159 - ns fall time - 111 - ns
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET internal drain inductance from upper edge of drain
mounting base to center of
die 2.5 - nH internal source inductance from source lead to source
bond pad 7.5 - nH
Source-drain diode
VSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure17 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-80 - ns recovered charge - 200 - nC
Table 4: Characteristics…continued =25 °C unless otherwise specified.
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET
Philips Semiconductors BUK7107-55A TE
TrenchPLUS standard level FET
