BUK7107-55AIE ,TrenchPLUS standard level FETBUK71/7907-55AIETrenchPLUS standard level FETRev. 01 — 12 August 2002 Product data1. Product profile ..
BUK7107-55ATE ,TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering■ Automotive an ..
BUK7109-75AIE ,TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering.1.4 Quick refe ..
BUK7109-75ATE ,TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering.1.4 Quick refe ..
BUK7208-40B ,N-channel TrenchMOS standard level FET
BUK7212-55B ,Trenchmos (tm) standard level FETApplications■ Automotive systems ■ 12 V and 24 V loads■ Motors, lamps and solenoids ■ General purpo ..
C2235 , TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
C2235 , TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
C2260 , TCXO EFC Standard Low Profile Small Size 100 % RoHS compliant
C230M ,Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 600 V.MAXIMUM RATINGS" DEIEBMEES [Imaging 5 r1” "t/g'-tttt'''(CCC-r-r-C-C230, 231C230( w.231 I "C232, 233 ..
c2383 , The C2383 is designed for color TV class B sound output applications
C2383 , The C2383 is designed for color TV class B sound output applications
BUK7107-55AIE-BUK7907-55AIE
TrenchPLUS standard level FET
BUK71/7907-55AIE renchPLUS standard level FET
Rev. 01 — 12 August 2002 Product data Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
Product availability:
BUK7107-55AIE in SOT426(D2-P AK)
BUK7907-55AIE in SOT263B (TO-220AB).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Integrated current sensor � Q101 compliant ESD protection � Standard level compatible. Variable Valve Timing for engines � Electrical Power Assisted Steering. VDS≤55V � RDSon= 5.8 mΩ (typ) ID≤ 140A � ID/Isense= 500 (typ).
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol gate (g)
SOT426(D2 -PAK) SOT263B (TO-220AB)2Isense drain (d) Kelvin source source (s) mounting base;
connected to drain (d) Front view MBK127
MBL263
MBL368Isense Kelvin source
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 55 V
VDGS drain-gate voltage (DC) IDG= 250μA - 55 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]- 140 A
[2] -75 A
Tmb= 100 °C; VGS =10V; Figure2 [2] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 560 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 272 W
IGS(CL) gate-source clamping current continuous - 10 mA=5 ms;δ= 0.01 - 50 mA
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current Tmb =25°C [1]- 140 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 560 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =68A;
VDS≤55 V; VGS=10 V; RGS =50Ω;
starting Tj =25°C 460 mJ
Electrostatic DischargeVesd electrostatic discharge voltage; all pins Human Body Model; C= 100 pF;= 1.5kΩ
6kV
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient
SOT263B vertical in still air - 60 - K/W
SOT426 minimum footprint; mountedona PCB - 50 - K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.55 K/W
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V
Tj = 25°C55 - - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9
Tj = 25°C2 3 4 V= 175 °C1 - - V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS=55 V; VGS =0V
Tj = 25°C - 0.1 10 μA= 175°C - - 250 μA
V(BR)GSS gate-source breakdown
voltage=±1 mA;
−55°C
IGSS gate-source leakage current VGS= ±10 V; VDS =0V =25°C - 22 1000 nA= 175 °C- - 10 μA
RDSon drain-source on-state
resistance
VGS =10V; ID =50A;
Figure7 and8
Tj = 25°C - 5.8 7 mΩ= 175 °C- - 14 mΩ
ID/Isense ratioof drain currentto sense
current
VGS >10V;
−55°C450 500 550
Dynamic characteristics
Qg(tot) total gate charge VGS =10V; VDS =44V; =25A; Figure14 116 - nC
Qgs gate-source charge - 19 - nC
Qgd gate-to-drain (Miller) charge - 50 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 4500 - pF
Coss output capacitance - 960 - pF
Crss reverse transfer capacitance - 510 - pF
td(on) turn-on delay time VDS=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω
-36 - ns rise time - 115 - ns
td(off) turn-off delay time - 159 - ns fall time - 111 - ns internal drain inductance from upper edge of drain
mounting base to center of
die 2.5 - nH internal source inductance from source lead to source
bond pad 7.5 - nH
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET
Source-drain diode
VSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure16 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-80 - ns recovered charge - 200 - nC
Table 4: Characteristics…continued =25 °C unless otherwise specified.
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET
Philips Semiconductors BUK71/7907-55AIE
TrenchPLUS standard level FET
