BUK6213-30A ,N-channel TrenchMOS intermediate level FETApplications 12 V loads General purpose power switching Automotive systems Motors, lamps and so ..
BUK7105-40AIE ,N-channel TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering.1.4 Quick refe ..
BUK7107-55AIE ,TrenchPLUS standard level FETBUK71/7907-55AIETrenchPLUS standard level FETRev. 01 — 12 August 2002 Product data1. Product profile ..
BUK7107-55ATE ,TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering■ Automotive an ..
BUK7109-75AIE ,TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering.1.4 Quick refe ..
BUK7109-75ATE ,TrenchPLUS standard level FETApplications■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering.1.4 Quick refe ..
C20T04Q , Schottky Barrier Diode
C20T06QH , Schottky Barrier Diode
C20T10Q , Schottky Barrier Diode
C2102A , HOOK-UP WIRE
C2235 , TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
C2235 , TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Suitable for logic or standard level
gate drive sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data[1] Continuous current is limited by bondwires.
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Rev. 03 — 2 February 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source
voltage≥25 °C; Tj≤ 175°C --30 V drain current VGS =10V; Tmb =25°C;
see Figure 1; see Figure 3
[1] --55 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --102 W
Static characteristicsRDSon drain-source
on-state
resistance
VGS =10V; ID =10A; =25°C; see Figure 4;
see Figure 5 1013mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =55A; Vsup≤30V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--267 mJ
Dynamic characteristicsQGD gate-drain charge VGS =5V; ID =25A;
VDS =24V
-14 -nC
NXP Semiconductors BUK6213-30A
N-channel TrenchMOS intermediate level FET Pinning information Ordering information
Table 2. Pinning information
Table 3. Ordering informationBUK6213-30A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
NXP Semiconductors BUK6213-30A
N-channel TrenchMOS intermediate level FET Limiting values[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by bondwires.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 30 V
VDGR drain-gate voltage RGS =20kΩ -30 V
VGS gate-source voltage -20 20 V drain current Tmb =100 °C; VGS=10 V; see Figure 1 [1] -45 A
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
[2] -55 A
[1] -64 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 257 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 102 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1] -64 A
[2] -55 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 257 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =55A; Vsup≤30 V; RGS =50Ω;
VGS =10V; Tj(init)=25 °C; unclamped 267 mJ
NXP Semiconductors BUK6213-30A
N-channel TrenchMOS intermediate level FET Thermal characteristics Characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base --1.4 K/W
Rth(j-a) thermal resistance from
junction to ambient 71.4 - K/W
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 30 --V =0.25mA; VGS =0V; Tj= -55°C 27 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C 1 1.8 3 V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj= -55°C --3.5 V =1mA; VDS =VGS; Tj= 175°C 0.5 - - V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state resistance VGS =4.5 V; ID=10A - 1520mΩ
VGS =10V; ID =10A; Tj= 175°C - - 25 mΩ
VGS =10V; ID =10A; Tj =25°C;see Figure 4; see Figure 5 - 1013mΩ
NXP Semiconductors BUK6213-30A
N-channel TrenchMOS intermediate level FETIDSS drain leakage current VDS =30V; VGS =0V; Tj =175 °C;
see Figure 4; see Figure 5 - 500 µA
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =24V; VGS =10V - 44 - nC =25A; VDS =24V; VGS =5V - 26 - nC
QGS gate-source charge - 7 - nC
QGD gate-drain charge - 14 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C 1490 1986 pF
Coss output capacitance - 505 606 pF
Crss reverse transfer
capacitance 325 445 pF
td(on) turn-on delay time VDS =25V; RL =1.2 Ω; VGS =10V;
RG(ext) =10Ω
-12 -ns rise time - 95 - ns
td(off) turn-off delay time - 75 - ns fall time - 105 - ns internal drain
inductance
measured from drain to center of die - 2.5 - nH internal source
inductance
measured from source lead to source
bond pad
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; Tj=25°C - 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =25V
-49 -ns recovered charge - 27 - nC
Table 6. Characteristics …continued
NXP Semiconductors BUK6213-30A
N-channel TrenchMOS intermediate level FET Package outline
Fig 6. Package outline SOT428 (DPAK)
