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BUJ103AXPHILIPSN/a1980avaiSilicon Diffused Power Transistor


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BUJ103AX
Silicon Diffused Power Transistor

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V Collector current (DC) - 4 A
ICM Collector current peak value - 8 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 26 W
VCEsat Collector-emitter saturation voltage 0.25 1.0 V
hFEsat DC current gain IC = 3 A; VCE = 5 V 12.5 - Fall time Ic=2A,IB1=0.4A 33 80 ns
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
base collector emitter
case isolated
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector to emitter voltage VBE = 0 V - 700 V
VCEO Collector to emitter voltage (open base) - 400 V
VCBO Collector to base voltage (open emitter) - 700 V Collector current (DC) - 4 A
ICM Collector current peak value - 8 A Base current (DC) - 2 A
IBM Base current peak value - 4 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 26 W
Tstg Storage temperature -65 150 ˚C Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Rth j-hs Junction to heatsink with heatsink compound - 4.8 K/W
Rth j-a Junction to ambient in free air 55 - K/W3
case
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
ICBO Collector cut-off current 1 VCBO = VCESMmax(700V) - - 0.1 mA
ICEO VCEO = VCEOMmax(400V) - - 0.1 mA
IEBO Emitter cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - 0.25 1.0 V
VBEsat Base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - 0.97 1.5 V
hFE DC current gain IC = 1 mA; VCE = 5 V 10 17 32
hFE IC = 0.5 A; VCE = 5 V 12 20 32
hFEsat DC current gain IC = 2 A; VCE = 5 V 13.5 16 20
IC = 3 A; VCE = 5 V - 12.5 -
DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ton Turn-on time 0.52 0.6 μs Turn-off storage time 2.7 3.2 μs Turn-off fall time 0.3 0.43 μs
Switching times (inductive load) ICon = 2 A; IBon = 0.4 A; LB = 1 μH;
-VBB = 5 V Turn-off storage time 1.2 1.33 μs Turn-off fall time 33 80 ns
Switching times (inductive load) ICon = 2 A; IBon = 0.4 A; LB = 1 μH;
-VBB = 5 V; Tj = 100 ˚C Turn-off storage time - 1.8 μs Turn-off fall time - 200 ns
1 Measured with half sine-wave voltage (curve tracer).
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 μs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
30-60 Hz
300R
90 %90 %
ICon
VCEOsust
IC / mA
250IBon
-VBB
T.U.T.
VCC
VCC
T.U.T.0
VIM B
-IBoff
10 %
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
Fig.7. Normalised power dissipation.
Fig.8. Typical DC current gain. hFE = f(IC)
parameter VCE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T 20 40 60 80 100 120 140
Ths / C120
110
100
90
80
70
60
50
40
30
20
10
0.1 1 10IC/A
VBEsat/V

0.01 1
0.1 10
IC / A
Tj = 25 C 1V
0.1 1 10
IC/A
VCEsat/V

0.01 0.10 1.00 10.00
IB/A
VCEsat/V
100u 10m 1 100
t / s
Zth / (K/W)10
0.1
0.01
0.001
10u 1m 100m 10
Silicon Diffused Power Transistor BUJ103AX
Fig.13. Reverse bias safe operating area. Tj ≤ Tj max
Fig.14. Test circuit for reverse bias
safe operating area.
Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1μH;
Lc = 200μH
Fig.15. Forward bias safe operating area. Ths ≤ 25 ˚C
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 μs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope. 100 200 300 400 500 600 700 800 900
VCEclamp (V)
IC (A)
VCEclamp (V)
IC (A)
Icm max
Ic maxIBon
-VBB
T.U.T.
VCC
VCL
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