BUH150 ,NPN High VoltageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
BUH2M20AP ,HIGH VOLTAGE NPN SILICON POWER TRANSISTORBUH2M20AP®HIGH VOLTAGE NPN SILICONPOWER TRANSISTOR■ EXTRA HIGH VOLTAGE CAPABILITY ■ LOW OUTPUT CAPA ..
BUH313 , HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR
BUH313. , HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR
BUH315D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUH315D®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIG ..
BUH315D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUH315D®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIG ..
C2012 , Multilayer Ceramic Chip Capacitors General use
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012X5R1A225K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
BUH150
NPN High Voltage
SWITCHMODE� NPN Silicon
Planar Power T ransistor
The BUH150 has an application specific state–of–art die designed
for use in 150 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the start–up conditions or under a short
circuit across the load.
This High voltage/High speed product exhibits the following main
features: Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching Robustness Thanks to the Technology Developed to Manufacture
this Device ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
