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BUF420ASTN/a4avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


BUF420A ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)caseSymbol Parameter Test Conditions ..
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BUF420A
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUF420A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY VERYHIGH SWITCHING SPEED MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
SWITCH MODE POWER SUPPLIES MOTOR CONTROL
DESCRIPTION

The BUF420A is manufactured using High
Voltage Multi Epitaxial Planar technologyfor high
switching speeds and high voltage capacity.It
usea Cellular Emitter structure with planar edge
terminationto enhance switching speeds while
maintaininga wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM

June 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit

VCEV Collector-Emitter Voltage (VBE= -1.5V) 1000 V
VCEO Collector-Emitter Voltage(IB=0) 450 V
VEBO Emitter-Base Voltage(IC =0) 7 V Collector Current 30 A
ICM Collector Peak Current(tp <5 ms) 60 A Base Current 6 A
IBM Base Peak Current(tp <5 ms) 9 A
Ptot Total DissipationatTc =25oC 200 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
TO-218

1/6
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case Max 0.63 o C/W
ELECTRICAL CHARACTERISTICS
(Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICER Collector Cut-off
Current (RBE =5Ω)
VCE =1000V
VCE =1000V Tc= 100oC
ICEV Collector Cut-off
Current (VBE= -1.5V)
VCE =1000V
VCE =1000V Tc= 100oC
IEBO Emitter Cut-off Current
(IC =0)
VBE =5V 1 mA
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB =0)= 200 mA L=25 mH 450 V
VEBO Emitter Base Voltage
(IC =0) =50 mA 7 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =10A IB =1A =10A IB =1A Tc =100oC =20A IB =2A =20A IB =2A Tc =100oC
VBE(sat)∗ Base-Emitter
Saturation Voltage =10A IB =1A =10A IB =1A Tc =100oC =20A IB =2A =20A IB =2A Tc =100oC
dic/dt Rateof rise on-state
Collector Current
VCC =300V RC =0 tp=3μs
IB1 =1.5A Tj =25oC
IB1 =1.5A Tj =100oC
IB1 =6A Tj =100oC
100 A/μs
A/μs
A/μs
VCE(3μs) Collector-Emitter
Dynamic Voltage
VCC =300V RC =60Ω
IB1 =1.5A Tj =25oC
IB1 =1.5A Tj =100oC
VCE(5μs) Collector-Emitter
Dynamic Voltage
VCC =300V RC =60Ω
IB1 =1.5A Tj =25oC
IB1 =1.5A Tj =100oC
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =0.5A= 0.25 mH
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =100oC
VCEW Maximum Collector
Emitter Voltage
without Snubber =10A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =125oC
500 V
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =0 RBB =0.15Ω
Vclamp= 400V IB1 =1A= 0.25 mH
BUF420A
2/6
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit

INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time =10A VCC =50V
VBB =0 RBB =0.15Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =100oC
VCEW Maximum Collector
Emitter Voltage
without Snubber =10A VCC =50V
VBB =0 RBB =0.15Ω
Vclamp= 400V IB1 =1A= 0.25 mH Tj =125oC
500 V
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time =20A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =4A= 0.12 mH
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time =20A VCC =50V
VBB =-5V RBB =0.6Ω
Vclamp= 400V IB1 =4A= 0.12 mH Tj =125oC
VCEW Maximum Collector
Emitter Voltage
without Snubber
ICWoff =30A VCC =50V
VBB =-5V RBB =0.6Ω= 0.08 mH IB1 =6A =125oC
400 V
Turn-on Switching Test Circuit.
Turn-off Switching Test Circuit. Fast electronic switch Non-inductive Resistor Fast recovery rectifier Fast electronic switch Non-inductive Resistor
BUF420A

3/6
Turn-on Switching Test Waveforms.
Turn-off Switching Test Waveforms
(inductive load).
Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area Storage Time Versus Pulse Time.
BUF420A

4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
4.7 4.9 0.185 0.193 1.17 1.37 0.046 0.054 2.5 0.098 0.5 0.78 0.019 0.030 1.1 1.3 0.043 0.051 10.8 11.1 0.425 0.437 14.7 15.2 0.578 0.598 – 16.2 – 0.637 18 0.708 3.95 4.15 0.155 0.163 31 1.220 – 12.2 – 0.480 4 4.1 0.157 0.161
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUF420A

5/6
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grantedby implicationor otherwise underany patentor patentrightsof STMicroelectronics. Specification mentioned inthis publicationare
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are notauthorizedfor useas critical componentsinlife support devices orsystems without express written approvalof STMicroelectronics.
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BUF420A

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