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BUF08630RGWR
Programmable Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology
VCOM
DAC
Resistors
OUT1
BKSEL
VSD
VCOM-FB VCOM-VS VCOM-OUTVS
VCOM-GND
OUT2
OUT3
OUT5
OUT6
BUF08832 BUF08630
www.ti.com SBOS515A –OCTOBER 2010–REVISED AUGUST 2012
Programmable Gamma-Voltage Generator and High Slew RateV COMwith Integrated Two-Bank Memory plus 1/2 AVDD Topology
Checkfor Samples: BUF08630
1FEATURES DESCRIPTIONThe BUF08630 offers eight programmable
10-Bit Resolution channels and one programmable VCOM channel.
• 8-Channel P-GammaThe final gamma and VCOM values can
• 1-Channel P-VCOM the on-chip, nonvolatile memory. To
• High Slew Rate VCOM: 45 V/μs programming errorsor liquid crystal display
16x Rewritable Nonvolatile Memory panel rework, the BUF08630 supports up
operationsto the on-chip memory.
• Two Independent Pin-Selectable Memory
Banks The BUF08630 has two separate memory
allowing simultaneous storageof two different
• Rail-to-Rail Output: curvesto facilitate switching between gamma
– 300 mV Min Swing-to-Rail (10 mA)All gamma and VCOM channels offer
– > 300 mA Max IOUT output that typically swingsto within 150 mVof either
• Low Supply Current supply rail witha 10-mA load. All channels are
• Supply Voltage:9Vto20V programmed usinga two-wire interface that supports
standard operations upto 400 kHz, and high-speed
• Digital Supply:2Vto 5.5V data transfersupto 3.4 MHz.
• Two-Wire Interface:The BUF08630 is manufactured using Texas
– Supports 400 kHz and 3.4 MHz Instruments’ proprietary, state-of-the-art, high-voltage
• 1/2 AVDD Capability CMOS process. This process offers very dense logic
and high supply voltage operationof upto 20V. The
APPLICATIONS BUF08630is availableina 20-pin QFN package, and specified from –40°Cto +95°C.
• TFT-LCD Reference Drivers
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