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BUF04ADN/a3avaiClosed-Loop High Speed Buffer
BUF04GSADIN/a50avaiClosed-Loop High Speed Buffer


BUF04GS ,Closed-Loop High Speed BufferCHARACTERISTICSGain A R = 2 kΩ 0.995 0.9985 1.005 V/VVCL L–40°C ≤ T ≤ +85°C 0.995 0.9980 1.005 V/VA ..
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BUF04-BUF04GS
Closed-Loop High Speed Buffer
FUNCTIONAL BLOCK DIAGRAMS
REV.0Closed-Loop
High Speed Buffer
FEATURES
Bandwidth – 110 MHz
Slew Rate – 3000 V/ms
Low Offset Voltage – <1 mV
Very Low Noise – < 4 nV/√Hz
Low Supply Current – 8.5 mA Mux
Wide Supply Range – 65 V to 615 V
Drives Capacitive Loads
Pin Compatible with BUF03
APPLICATIONS
Instrumentation Buffer
RF Buffer
Line Driver
High Speed Current Source
Op Amp Output Current Booster
High Performance Audio
High Speed AD/DA

High slew rate and very low noise and THD, coupled with wide
input and output dynamic range, make the BUF04 an excellent
choice for video and high performance audio circuits.
The BUF04’s inherent ability to drive capacitive loads over a
wide voltage and temperature range makes it extremely useful
for a wide variety of applications in military, industrial, and
commercial equipment.
The BUF04 is specified over the extended industrial (–40°C to
+85°C) and military (–55°C to +125°C) temperature range.
BUF04s are available in plastic and ceramic DIP plus SO-8
surface mount packages.
Contact your local sales office for MIL-STD-883 data sheet and
availability.
*Patent pending.
GENERAL DESCRIPTION

The BUF04 is a wideband, closed-loop buffer that combines
state of the art dynamic performance with excellent dc
performance. This combination enables designers to maximize
system performance without any speed versus dc accuracy
compromises.
Built on a high speed Complementary Bipolar (CB) process for
better power performance ratio, the BUF04 consumes less than
8.5 mA operating from ±5 V or ±15 V supplies. With a 2000 V/μs
min slew rate, and 100 MHz gain bandwidth product, the
BUF04 is ideally suited for use in high speed applications where
low power dissipation is critical.
Full ±10 V output swing over the extended temperature range
along with outstanding ac performance and high loop gain
accuracy makes the device useful in high speed data acquisition
systems.
Plastic DIP
8-Lead and Cerdip
(P, Z Suffix)
8-Lead Narrow-Body SO
(S Suffix)NULL
NC = NO CONNECT
NULL
OUT1
BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS

OUTPUT CHARACTERISTICS
TRANSFER CHARACTERISTICS
DYNAMIC PERFORMANCE
NOISE PERFORMANCE
NOTELong term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C with an LTPD of 1.3.
Specifications subject to change without notice.
(@ VS = 615.0 V, TA = +258C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
OUTPUT CHARACTERISTICS
TRANSFER CHARACTERISTICS
POWER SUPPLY
DYNAMIC PERFORMANCE
NOISE PERFORMANCE
NOTELong term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.
Specifications subject to change without notice.
(@ VS = 65.0 V, TA = +258C unless otherwise noted)
BUF04
BUF04
WAFER TEST LIMITS

Input Bias Current
Power Supply Rejection Ratio
Output Voltage Range
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Maximum Power Dissipation . . . . . . . . . . . . . . . See Figure 16
Storage Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
BUF04Z . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
BUF04S, P . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . .+300°C
NOTESAbsolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket
for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit
board for SOIC package.
ORDERING GUIDE
DICE CHARACTERISTICS

BUF04 Die Size 0.075 x 0.064 inch, 5,280 Sq. Mils
Substrate (Die Backside) Is Connected to V+
Transistor Count 45.
(@ VS = 615.0 V, TA = +258C unless otherwise noted)
OFFSET – mV
UNITS
120

Figure 1.Input Offset Voltage (VOS) Distribution @
±15 V, P-DIP
OFFSET – mV
UNITS

Figure 2.Input Offset Voltage (VOS) Distribution @
±5 V, P-DIP
TEMPERATURE – °C
OFFSET – mV

Figure 3.Input Offset Voltage (VOS) vs. Temperature
OFFSET – mV
UNITS

Figure 4.Input Offset Voltage (VOS) Distribution @
±15 V, Cerdip
OFFSET – mV
UNITS

Figure 5.Input Offset Voltage (VOS) Distribution @
±5 V, Cerdip
Figure 6.Input Bias Current vs. Temperature
BUF04
TEMPERATURE – °C
SUPPLY CURRENT – mA

Figure 7.Supply Current vs. Temperature
OUTPUT SWING – Volts
TEMPERATURE – °C

Figure 8.Output Voltage Swing vs. Temperature @ ±15 V1001M100k10k1k
LOAD RESISTANCE – Ω
OUTPUT SWING – Volts

Figure 9.Maximum VOUT Swing vs. Load @ ±5 V10k100M10M1M100k
FREQUENCY – Hz
OUTPUT IMPEDANCE –

Figure 10.Output Impedance vs. Frequency
OUTPUT SWING – Volts
TEMPERATURE – °C

Figure 11.Output Voltage Swing vs. Temperature @ ±5 V10010k1k
LOAD RESISTANCE – Ω
OUTPUT SWING – Volts

Figure 12.Maximum VOUT Swing vs. Load @ ±15 V
–8–1086420–2–4–6COMMON MODE VOLTAGE – Volts
INPUT BIAS CURRENT – µA

Figure 13.Bias Current vs. Input Voltage10k100M10M1M100k
FREQUENCY – Hz
POWER SUPPLY REJECTION – dB

Figure 14.Power Supply Rejection vs. Frequency
SLEW RATE – V/µs
TEMPERATURE – °C

Figure 15.Slew Rate vs. Temperature12525100755085
TEMPERATURE – °C
POWER DISSIPATION – W

Figure 16.Maximum Power Dissipation vs.
Ambient Temperature
Figure 17.Input Noise Voltage vs. Frequency
CAPACITIVE LOAD – pF
SLEW RATE – V/µs

Figure 18.Slew Rate vs. Capacitive Loads
BUF04
CAPACITANCE – pF
BANDWIDTH – MHz
PHASE – Deg
–90

Figure 19.Bandwidth and Phase vs.
Capacitive Loads @ ±5 V
±15±10±5
SUPPLY VOLTAGE –Volts
BANDWIDTH – MHz

Figure 20.Bandwidth vs. Supply Voltage and
Temperature–8–1084206–2–4–6
OUTPUT VOLTAGE – Volts
GAIN DEVIATION – dB
PHASE DEVIATION – Degrees

Figure 21.Gain and Phase Deviation, RL = 150 Ω
CAPACITANCE – pF
BANDWIDTH – MHz
PHASE – Deg
–90

Figure 22.Bandwidth & Phase vs.
Capacitive Loads @ ±15 V
1001k10k
RESISTIVE LOAD – Ω
BANDWIDTH – MHz

Figure 23.Bandwidth vs. Loads–8–1084206–2–4–6
OUTPUT VOLTAGE – Volts
GAIN DEVIATION – dB
PHASE DEVIATION – Degrees
1.5

Figure 24.Gain and Phase Deviation, RL = 2 kΩ
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