BUD42D ,High Speed, High Gain Bipolar NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
BUF01900AIPW ,Reference Voltage Generator for VCOM Adjustment 8-TSSOP MAXIMUM RATINGSSupply Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
BUF04 ,Closed-Loop High Speed BufferCHARACTERISTICSGain A R = 2 kΩ, 0.995 0.9977 1.005 V/VVCL L–40°C ≤ T ≤ +85°C 0.995 1.005 V/VAGain L ..
BUF04701AIDGS ,4-Channel, 12V, CMOS Buffer AmplifierELECTRICAL CHARACTERISTICS: V = +3.5V to +12VSBoldface limits apply over the specified temperature ..
BUF04701AIDGSR ,4-Channel, 12V, CMOS Buffer Amplifierfeatures rail-* HIGH SLEW RATE: 10V/µ sto-rail input and output capability, giving maximum dynamic* ..
BUF04701AIPWR ,4-Channel, 12V, CMOS Buffer AmplifierMAXIMUM RATINGSELECTROSTATICSupply Voltage, V+ to V– .. 13.2VDISCHARGE SENSITIVITY(2)Signal Input T ..
C1921 , Channel Photomultipliers
C1942 , Channel Photomultipliers
C1942 , Channel Photomultipliers
C1944 , Channel Photomultipliers
C1963 , Channel Photomultipliers
C1972 , Channel Photomultipliers
BUD42D
High Speed, High Gain Bipolar NPN Transistor
BUD42D
High Speed, High Gain
Bipolar NPN T ransistor with
Antisaturation Network and
Transient Voltage
Suppression Capability
The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features: Free Wheeling Diode Built In Flat DC Current Gain Fast Switching Times and Tight Distribution “6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads Epoxy Meets UL94, VO @ 1/8” ESD Ratings: Machine Model, C; >400 V
Human Body Model, 3B; >8000 V
Two Versions: BUD42D−1: Case 369D for Insertion Mode BUD42D, BUD42DT4: Case 369C for Surface Mount Mode
MAXIMUM RATINGS
TYPICAL GAIN
THERMAL CHARACTERISTICS
