BU208D Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B32 > BU208D, 60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE.

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BU208D	TOSHIBA	N/a	283	avai	60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE.

BU208D , 60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE.BU208DBU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORSn BU208D AND BU508DFI ARE ST ..
BU2114F , 8-bit shift register and latch driver
BU2185F , Clock generator
BU2285FV , DVD-Audio Reference Clock Generator for Audio/Video Appliance
BU2288FV , DVD-video Reference Clock Generators for Audio/Video Equipments
BU2294AF , Clock generator IC
C0603C101J5GAC , Ceramic Capacitor
C0603C101J5GAC , Ceramic Capacitor
C0603C102K5RAC , Ceramic Capacitor
C0603C103K5RACTU , Multi-Cal-System Evaluation Module
C0603C104Z3VAC , CERAMIC CHIP/STANDARD
C0603CH1E100D , Multilayer Ceramic Chip Capacitors

BU208D
60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE.
BU208D
BU508D/BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS BU208D AND BU508DFI ARE STM
PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE# E81734 (N) JEDEC TO-3METAL CASE NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and usesa Hollow Emitter structureto enhance
switching speeds. INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) 1500 V
VCEO Collector-Emitter Voltage(IB=0) 700 V
VEBO Emitter-Base Voltage(IC =0) 10 V Collector Current 8 A
ICM Collector Peak Current(tp <5 ms) 15 A-3 TO- 218 ISOWATT218
Ptot Total DissipationatTc =25oC 150 125 50 W
Tstg Storage Temperature -65to 175 -65to 150 -65to 150 oC Max. Operating Junction Temperature 175 150 150 oC
TO-218 ISOWATT218 1
TO-3
For TO-3: =Tab= Pin2.
1/8
THERMAL DATA
TO-3 TO-218 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 1 1 2.5 o C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =1500V
VCE =1500V Tj =125oC
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V 300 mA
VCEO(sus) Collector-Emitter
Sustaining Voltage= 100mA 700 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =4.5A IB =2A 1 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =4.5A IB =2A 1.3 V
INDUCTIVE LOAD
Storage Time
Fall Time =4.5A hFE =2.5 VCC =140V =0.9 mH LB =3 μH7
550 Diode Forward Voltage IF =4A 2 V Transition Frequency IC =0.1A VCE =5Vf =5 MHz 7 MHz
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
Safe Operating Area (TO-3) Safe OperatingArea (TO-218/ISOWATT218)
BU208D/ BU508D/ BU508DFI
2/8
Current GainBase Emitter SaturationVoltage
Switching Time Inductive Load (see figure1)
Collector Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Percentancevs. Case
BU208D/ BU508D/ BU508DFI
3/8
Figure1: Inductive Load Switching Test Circuit.
BU208D/ BU508D/ BU508DFI
4/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 11.00 13.10 0.433 0.516 0.97 1.15 0.038 0.045 1.50 1.65 0.059 0.065 8.32 8.92 0.327 0.351 19.00 20.00 0.748 0.787 10.70 11.10 0.421 0.437 16.50 17.20 0.649 0.677 25.00 26.00 0.984 1.023 4.00 4.09 0.157 0.161 38.50 39.30 1.515 1.547 30.00 30.30 1.187 1.193AP
P003F
TO-3 MECHANICAL DATA
BU208D/ BU508D/ BU508DFI
5/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.7 4.9 0.185 0.193 1.17 1.37 0.046 0.054 2.5 0.098 0.5 0.78 0.019 0.030 1.1 1.3 0.043 0.051 10.8 11.1 0.425 0.437 14.7 15.2 0.578 0.598 – 16.2 – 0.637 18 0.708 3.95 4.15 0.155 0.163 31 1.220 – 12.2 – 0.480 4 4.1 0.157 0.161
TO-218 (SOT-93) MECHANICAL DATA
P025A
BU208D/ BU508D/ BU508DFI
6/8

TEL:86-533-2716050 FAX:86-533-2716790