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BTS725L1SIMENSN/a160avai2 Channel PROFET Smart High Side Powe...


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BTS725L1
2 Channel PROFET Smart High Side Powe...
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ec no 09y
PROFET®BTS725L1
Smart Two Channel Highside Power Switch
Product Summary
Features Overvoltage Protection Vbb(Az) 43 V
q Overload protection Operating voltage Vbb(on) 5.0 ... 24 V
: Current. "mftat'on . active channels: one two parallel
. iie,rrt,1'f,1t,t'2enction On-state resistance RON 6O 30 mn
. Overvoltage protection Nominal load current [L(NOM) 4.0 6.0 A
(including load dump) Current limitation A(NOM) 17 17 A
q Reverse battery protection1)
q Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
. Open drain diagnostic output
. Open load detection in ON-state
. CMOS compatible input
q Loss of ground and loss of Vbb protection
. Electrostatic discharge (ESD) protection
Application
q wc compatible power switch with diagnostic feedback
for 12 V DC grounded loads
. Most suitable for resistive and lamp loads
q Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS© technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin Symbol Function . . .
1,10, Vbb Positive power supply voltage. Design the Pin configuration (top view)
11,12, wiring for the simultaneous max. short circuit
15,16, currents from channel 1 to 2 and also for low Vbb 1 Ct 20 Vbb
19,20 thermal resistance GND1 2 19 Vbb
3 IN1 Input 1,2, activates channel 1,2 in case of INI 3 18 OUT1
7 IN2 logic high signal ST1 4 17 OUT1
17,18 OUT1 Output 1,2, protected high-side power output N.C. 5 16 Vbb
13,14 OUT2 of channel 1,2. Design the wiring for the max. GND2 6 15 Vbb
short circuit current IN2 7 14 OUT2
4 ST1 Diagnostic feedback 1,2 of channel 1,2, ST2 8 13 OUT2
8 ST2 open drain, low on failure N.C. 9 12 vbb
2 GND1 Ground 1 of chip 1 (channel 1) Vbb 10 11 Vbb
6 GND2 Ground 2 of chip 2 (channel 2)
5,9 N.C. Not Connected
1) 1Mth external current limit (e.g. resistor RGND=150 Q) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet 1
1999-06-1 6
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BTS 725L1
Block diagram
Two Channels; Open Load detection in on state;
- - - - - - - - - - n
I + Vbb Leadirame
I Voltage Overvoltage Current Gate ll- I
source protection limit protection l,l,Ils
I I_>VLogic I l 1 II I
Voltage Charge pump oUra17,18 -
I sensor Level shifter Temperature I
3 IN1 l Rectifier sensor
l - . Open léad I Load
4 STI ESD - Logic detection
1 9101
= Chip 1 GNDI
Signal GNL -l Load GND
Chip1- - - - - - - - - -
+ I/bb Leadframe
I II I
OUT213,14
Logic and protection circuit of chip 2
I (equivalent to chip 1) I
I I Load
6 GND2 I
. J, Chip 2 co GND2
S'gng'hiND - - - - - PEOFE: - - J Load GND
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Maximum Ratings at Ti = 25°C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Vbb 24 V
T,start = -40 ...+150°C
Data Sheet
1999-06-1 6
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