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BTS716GINFINEONN/a36000avaiSmart High Side Switches


BTS716G ,Smart High Side SwitchesGeneral Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS comp ..
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BTS716G
Smart High Side Switches
BTS 716G
Smart High-Side Power Switch
Four Channels: 4 x 140mΩ
Status Feedback
Product Summary Package

General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions
Applications
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground
Protection Functions Block Diagram
Short circuit protection Overload protection
• Current limitation
• Thermal shutdown Overvoltage protection (including load dump) with external
resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Diagnostic Function
Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state
BTS 716G
Functional diagram

BTS 716G
Pin Definitions and Functions

Pin configuration

BTS 716G
Maximum Ratings at Tj = 25°C unless otherwise specified

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
BTS 716G
Thermal Characteristics

Electrical Characteristics
Load Switching Capabilities and Characteristics

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14 Soldering point: upper side of solder edge of device pin 15. See page 14
BTS 716G
Operating Parameters
Protection Functions15)


10) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
11) not subject to production test, specified by design
12) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
13) Measured with load; for the whole device; all channels off
14) Add IST, if IST > 0
15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
BTS 716G
Reverse Battery

Diagnostic Characteristics

Input and Status Feedback18)


17) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
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