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BTS707
Smart High Side Switches
Smart Two Channel Highside Power Switch
Features • Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection Fast demagnetization of inductive loads
• Reverse battery protection1)
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application • µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Pin Definitions and Functions
Product Summary Pin configuration (top view) bb Vbb
GND1 Vbb
IN1 OUT1
ST1 OUT1
N.C. Vbb
GND2 Vbb
IN2 OUT2
ST2 OUT2
N.C. Vbb bb Vbb
Block diagram Logic
Signal-
Chip 1
Chip 1 PROFET
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Signal-
Chip 2
Chip 2
Load GND
Logic and protection circuit of chip 2
(equivalent to chip 1)
GND
GND
Maximum Ratings at Tj = 25°C unless otherwise specified Maximum Ratings at Tj = 25°C unless otherwise specified
Thermal Characteristics Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 12 Soldering point: upper side of solder edge of device pin 15. See page 12
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters Protection Functions7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
5) see also VON(CL) in circuit diagram on page 7. Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Reverse Battery Diagnostic Characteristics
Input and Status Feedback10) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
10) If ground resistors RGND are used, add the voltage drop across these resistors.
Truth Table Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
PROFETIN1
ST1
OUT1
GND1bbST1VIN1IN1bbL1OUT1IGND1ON1
Leadframe
17,18
IbbST1GND1
Chip 1ST2VIN2IN2L2OUT2IGND2ON2
Leadframe
13,14IST2GND2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
