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BTS4140N
Smart High Side Switches
BTS 4140 N
Smart High-Side Power Switch
One Channel: 1 x 1Ω
Features• Current controlled input
• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection (including load dump)
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection
• Improved electromagnetic compatibility (EMC)
Product SummarySOT-223
Application• All types of resistive, inductive and capacitive loads
• Current controlled power switch for 12V, 24V and 42V DC applications
• Driver for electromechanical relays
• Signal amplifier
General DescriptionN channel vertical power MOSFET with charge pump and current controlled input,
monolithically integrated in Smart SIPMOStechnology.
Providing embedded protective functions.
BTS 4140 N
Block Diagram
+ Vbb
GND
Control
CircuitTemperatureSensor
OUTL
2/4
BTS 4140 N
Maximum RatingsDevice on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.not subject to production test, specified by designmore details see EMC-Characteristics on page 7VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
BTS 4140 N
Electrical Characteristics
Thermal Characteristics
Load Switching Capabilities and CharacteristicsDevice on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.Nominal load current is limited by the current limitation ( see page 5 )
BTS 4140 N
Electrical Characteristics
Operating Parameters
Protection Functions1)Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
.
BTS 4140 N
Electrical Characteristics
Input
Reverse BatteryDriver circuit must be able to drive currents > 1mA.
BTS 4140 N
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage: Vbb = 13.5V Temperature: Ta = 23 ±5°C ;
Load: RL = 220Ω
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.: -
Fast electrical transients
Acc. ISO 7637
The test pulses are applied at Vbb
Definition of functional status
Test circuit:L
Pulse
Bat.
BTS 4140 N
Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)
Typ. Vbb-Pin Emission at DC-On with 150Ω-matching network000
0,11101001000
f / MHz
Typ. Vbb-Pin Emission at PWM-Mode with 150Ω-matching network
0,11101001000
f / MHz
Test circuit:
5µH
5µH
BSS100
BTS 4140 N
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection: Forward Power CW
Failure criteria: Amplitude and frequency deviation max. 10% at Out
Typ. Vbb-Pin Susceptibility at DC-On/Off101001000
f / MHz
Typ. Vbb-Pin Susceptibility at PWM-Mode101001000
f / MHz
Test circuit:5µH
150Ω
5µHBSS100
