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BTS112ASIEMENSN/a1avaiTEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)


BTS112A ,TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electricalIy shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS113A ,Temperature Protected SwitchDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 5.8 A 4.5 7.5 –DS D DS(on) ..
BTS113A ,Temperature Protected Switchcharacteristic3 The drain pin is electrically shorted to the tab 21Pin 1 2 3GD SType V I R Package ..
BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS114A ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)Dynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I =9 A 5.0 8.0 –DS D DS(on)max ..
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BZX84C3V9 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEFeatures

BTS112A
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
o"''"''"
Infineon
technologies
TEMPFET® BTS 112 A
Features
0 N channel
0 Enhancement mode
0 Temperature sensor with thyristor characteristic
0 The drain pin is electrically shorted to the tab
Pin 1 3
Type VDs ID Rosm, Package Ordering Code
BTS 112A 60 V 12 A 0.15 n TO-220AB
C67078-S5014-A3
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage Vos 60 V
Drain-gate voltage, Rss = 20 k9 VDGR 60
Gate-source voltage Vss ul- 20
Continuous drain current, TC = 33 °C h, 12 A
ISO drain current uso 2.5
To = 85°C, VGS = 10 V, Vos = 0.5 V
Pulsed drain current, TC = 25 00 h, puls 48
Short circuit current, T, = - 55 ... + 150 °C ISC 27
Short circuit dissipation, T, = - 55 ... + 150 °C PSCmaX 400 W
Power dissipation PM 40
Operating and storage temperature range Ti, T stg - 55 ... + 150 °C
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Thermal resistance K/W
Chip-case Re, JC 3 3.1
Chip-ambient RthJA s 75
o"''"''"
Infineon
technologies
TEMPFET® BTS 112 A
Electrical Characteristics
at T = 25 'C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(Bmss V
Vss = 0, h, = 0.25 mA 60 - -
Gate threshold voltage VGSW
VGS = VDS, ID = 1.0 mA 2.5 3.0 3.5
Zero gate voltage drain current I DSS uA
Vas = 60 V, VDS = 0
T = 25 °C - 0.1 1.0
( = 150 °C - 10 100
Gate-source leakage current I GSS
VGS=i20V7 VDS=O
( = 25 °C - 10 100 nA
T = 150 °C - 2 4 “A
Drain-source on-state resistance Rome”) n
Vss--10V,h,--7.5A - 0.12 0.15
Dynamic Characteristics
Forward transconductance gfs S
Vos 2 2 M h, M RDS(on)max1 h, = 7.5 A 3.0 5.7 -
Input capacitance Ciss pF
VGS = 0, Vos = 25 V,f= 1 MHz - 360 480
Output capacitance COSS
Vss = 0, Vos = 25 V,f=1 MHz - 160 250
Reverse transfer capacitance Css
Vss = 0, Vos = 25 V,f=1 MHz - 50 90
Turn-on time ton, (ton = td(on) + t,) tdm - 15 25 ns
Vcc--30V,Vss--10V,ho--3A,Rss--50n t - 30 45
Turn-off time u, (ts, = Ida)”, + t,) td(oit) - 40 55
VCC:3OV, Vss--10V,h,--3A,Rss--50Q t, - 55 75
2 19.02.04
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