| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BTRZ1002AA |
SAMSUNG |
N/a |
472 |
 |
|
BTS100 ,P-Channel TEMPFETDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = – 5 A 1.5 2.3 4.0DS D DS(o ..
BTS110 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic● The drain pin is electrically shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS110 ,TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
BTS112A ,TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)characteristic The drain pin is electricalIy shorted to the tab321Pin 1 2 3GD SType V I R Package ..
BTS113A ,Temperature Protected SwitchDynamic CharacteristicsForward transconductance g SfsV ≥ 2 × I × R , I = 5.8 A 4.5 7.5 –DS D DS(on) ..
BZX84C3V6-7-F , 350mW SURFACE MOUNT ZENER DIODE
BZX84C3V6LT1 ,SEMICONDUCTOR(TECHNICAL DATA)Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BZX84C3V6LT1G ,Zener Voltage RegulatorsFeatures• Pb−Free Packages are Available• 225 mW Rating on FR−4 or FR−5 Board3• Zener Breakdown Vol ..
