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BTA312X-600C
3Q Hi-Com Triac
A312X-600C3Q Hi-Com Triac5 October 2012 Product data sheet Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "fullpack" plastic package intended for use in circuits where high static and dynamic dV/dtand high dI/dt can occur. This "series C" triac will commutate the full rated RMS currentat the maximum rated junction temperature without the aid of a snubber.
1.2 Features and benefits 3Q technology for improved noise immunity• High commutation capability with maximum false trigger immunity• High immunity to false turn-on by dV/dt• High voltage capability• Isolated mounting base package• Less sensitive gate for high noise immunity• Planar passivated for voltage ruggedness and reliability• Triggering in three quadrants only
1.3 Applications Electronic thermostats (heating and cooling)• High power motor controls e.g. washing machines and vacuum cleaners• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 100 A
IT(RMS) RMS on-state current full sine wave; Th ≤ 59 °C; Fig. 1; Fig. 2;
Fig. 3 - 12 A
Static characteristics - 35 mA
NXP Semiconductors BTA312X-600C
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 35 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 35 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate n.c. mounting base; isolated21
TO-220F (SOT186A)
sym051 Ordering information
Table 3. Ordering information
Name Description Version
BTA312X-600C TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 59 °C; Fig. 1; Fig. 2;
Fig. 3 12 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 100 AITSM non-repetitive peak on-statecurrent 110 A
NXP Semiconductors BTA312X-600C
3Q Hi-Com Triac
Symbol Parameter Conditions Min Max Unit2t I2 t for fusing tp = 10 ms; SIN - 50 A2s
dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
003aab679
-50 0 50 100 150Th (°C)
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of heatsinktemperature; maximum values
003aab681
100-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
f = 50 Hz; Th = 59 °C
Fig. 2. RMS on-state current as a function of surgeduration; maximum values
003aab690 12
Ptot
(W)= 180°
120°
90°
60°
conductionangle(degrees)
formfactora60901201802.82.21.91.57
NXP Semiconductors BTA312X-600C
3Q Hi-Com Triac
003aab80623-5 10-4 10-3 10-2 10-1tp(s)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
(1)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab809
120 10 102 103number of cycles (n)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues Max Unit 4 K/W 5.5 K/W
NXP Semiconductors BTA312X-600C
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 55 - K/W
003aab672
Zth(j-h)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
(1)(2)
(3)(4)
(1) Unidirectional (half cycle) without heatsink compound(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dustfree ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; - 2500 V - pF Max Unit 35 mA
NXP Semiconductors BTA312X-600C
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 35 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 35 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 - 50 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 - 60 mA latching current
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 - 50 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 35 mA on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.8 1.5 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
500 - - V/µs
dIcom/dt rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit - - A/ms

Partno	Mfg	Dc	Qty	Available	Descript
BTA312X-600C \|BTA312X600C	NXP	N/a	30000	avai	3Q Hi-Com Triac