BTA208S-800B Fast Delivery |IC PHOENIX CO.,LIMITED

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BTA208S-800B
Three quadrant triacs high commutation
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series B
high commutation BTA208M series B
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsina plastic envelope, suitablefor surface mounting, intendedfor use BTA208S (or BTA208M)- 500B 600B 800B circuits where high static and VDRM Repetitive peak off-state 500 600 800 V
dynamic dV/dt and high dI/dt can voltagesoccur. These devices will commutate I T(RMS) RMS on-state current 8 8 8 A
the full rated rms current at the ITSM Non-repetitive peak on-state 65 65 65 A
maximum rated junction temperature, currentwithout the aidofa snubber.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN Standard Alternative
NUMBER S M MT1 gate MT2 MT2 gate MT1
tab MT2 MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 8 A
Tmb ≤ 102 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A2 tI2 t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series B
high commutation BTA208M series B
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
Rth j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA On-state voltage IT = 10 A - 1.3 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITD/dt Critical rate of rise of VDM = 67% V DRM(max); Tj = 125 ˚C; 1000 4000 - V/μs
off-state voltage exponential waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; - 14 - A/mscommutating current without snubber; gate open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series B
high commutation BTA208M series B
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 102˚C.
Fig.6. Normalised gate trigger voltage 468 100
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s 10 100 10000
Number of half cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series B
high commutation BTA208M series B
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of change of commutating
current, dIcom/dt versus junction temperature.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01
tp / s
Zth j-mb (K/W)
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 40 60 80 100 120 1401
Tj / C
dIcom/dt (A/ms)
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series B
high commutation BTA208M series B
MECHANICAL DATA
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
2.5
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series B
high commutation BTA208M series B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

Partno	Mfg	Dc	Qty	Available	Descript
BTA208S-800B \|BTA208S800B	PHILIPS	N/a	2302	avai	3Q Hi-com Triac