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BTA208-800E |BTA208800EPHILIPSN/a10avaiThree quadrant triacs guaranteed commutation


BTA208-800E ,Three quadrant triacs guaranteed commutationGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated guaranteed commutation SYMBOL PARAMETER MAX. MAX ..
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BTA208-800E
Three quadrant triacs guaranteed commutation
Philips Semiconductors Objective specification
Three quadrant triacs BTA208 series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacsina plastic envelope intended forusein motor control circuitsor with other BTA208- 600D -
highly inductive loads. These devices BTA208- 600E 800E
balance the requirementsof commutation BTA208- 600F 800Fperformance and gate sensitivity. The VDRM Repetitive peak 600 800 V
"sensitive gate"E series and "logic level" off-state voltages series are intendedfor interfacing with IT(RMS) RMS on-state current 8 8 Alow power drivers, including micro ITSM Non-repetitive peak on-state 65 65 A
controllers. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
main terminal 1 main terminal 2 gate
tab main terminal 2
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800

VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 8 A
Tmb ≤ 102 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 72 A2 tI2 t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
tab
Philips Semiconductors Objective specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA208- ...D ...E ...F

IGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA On-state voltage IT = 10 A - 1.3 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA208- ...D ...E ...F

dVD/dt Critical rate of rise of VDM = 67% VDRM(max);30 60 70 - V/μs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 20v/μs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 3.5 4.5 5.5 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 0.1v/μs; gate
open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max);- - - 2 - μs
time IG = 0.1 A; dIG/dt = 5 A/μs
Philips Semiconductors Objective specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g
Fig.1. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Objective specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information

Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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