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BTA204X-600C |BTA204X600CPHIN/a121000avai3Q Hi-Com Triac


BTA204X-600C ,3Q Hi-Com TriacGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated high commutation triacs in SYMBOL PARAMETER MAX. ..
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BTA204X-600C
Three quadrant triacs high commutation
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated high commutation triacsin SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic full pack envelope intendedfor use incircuitswhere high staticand BTA204X- 500B 600B 800B
dynamic dV/dt and high dI/dt can BTA204X- 500C 600C 800C
occur. These devices will commutate VDRM Repetitive peak 500 600 800 Vthe full rated rms current at the off-state voltages
maximum rated junction temperature IT(RMS) RMS on-state current 4 4 4 A
without the aidofa snubber. ITSM Non-repetitive peak on-state 25 25 25 Acurrent
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
main terminal 1 main terminal 2 gate
case isolated
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800

VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 4 A
Ths ≤ 92 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A2 tI2 t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
case
Philips Semiconductors Product specification
Three quadrant triacs
BTA204X series B and C
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 5.5 K/W
without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204X- ...B ...C

IGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ - - 50 35 mA
T2+ G- - - 50 35 mA
T2- G- - - 50 35 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 30 20 mA
T2+ G- - - 45 30 mA
T2- G- - - 30 20 mA Holding current VD = 12 V; IGT = 0.1 A - - 30 20 mA On-state voltage IT = 5 A - 1.4 1.7 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
BTA204X- ...B ...C

dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 1000 1000 - V/μs
off-state voltage exponential waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A; 6 3 - A/ms
commutating current dVcom/dt = 20V/μs; gate open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - - 2 μs
time dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Three quadrant triacs
BTA204X series B and C
high commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 92˚C.
Fig.6. Normalised gate trigger voltage 23450
IT(RMS) / A
Ptot / W Ths(max) / C
-50 0 50 100 1500
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
0.01 0.1 1 100
surge duration / s 10 100 10000
Number of cycles at 50Hz
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Three quadrant triacs
BTA204X series B and C
high commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01
tp / s
Zth j-hs (K/W)
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C)
Philips Semiconductors Product specification
Three quadrant triacs
BTA204X series B and C
high commutation
MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes

1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3
Philips Semiconductors Product specification
Three quadrant triacs
BTA204X series B and C
high commutation
DEFINITIONS
Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information

Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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