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BTA204W-800E |BTA204W800EPHILIPSN/a3160avaiThree quadrant triacs guaranteed commutation
BTA204W-800E |BTA204W800ENXPN/a3000avaiThree quadrant triacs guaranteed commutation


BTA204W-800E ,Three quadrant triacs guaranteed commutationGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated guaranteed commutation SYMBOL PARAMETER MAX. MAX ..
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BTA204W-800E
Three quadrant triacs guaranteed commutation
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BTA204W series D, E and F
Three quadrant triacs guaranteed
Product specification
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December 1998
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Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA204W- 500D 600D -
motor control circuits or with other BTA204W- 500E 600E 800E
highly inductive loads. These devices BTA204W- 500F 600F 800F
balance the requirements of VDRM Repetitive peak 500 600 800
commutation performance and gate off-state voltages
sensitivity. The "sensitive gate" E IURMS) RMS on-state current 1 1 1 A
series and "logic level" D series are TSM Non-repetitive peak on-state 10 10 10 A
intended for interfacing with low power current
drivers, including micro controllers.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION 4
1 main terminal 1
2 main terminal 2
3 gate Ci,_i2_
tab main terminal 2 1 2 3 G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IWS) RMS on-state current full sine wave; - 1 A
T, 3 108 (
ITSM Non-repetitive peak idi sine wave,'
on-state current I = 25 ( prior to
t = 20 ms - 10 A
t= 16.7 ms - 11 A
Pt Pt for fusing t= 10 ms - 0.5 A25
dIT/dt Repetitive rate of rise of In, = 1.5 A; 100 Alps
on-state current after ls = 0.2 A;
triggering dIG/dt = 0.2 A/ps
' Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
Pew) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 (
T, Operating junction - 125 (
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/ps.
December 1998 2 Rev1.000
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