BT236X-600 Fast Delivery |IC PHOENIX CO.,LIMITED

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BT236X-600
4Q Triac
TO-220F BT236X-600
4Q Triac 18 October 2013 Product data sheet General description
Planar passivated four quadrant triac in a SOT186A "full pack" plastic package intendedfor use in general purpose bidirectional switching and phase control applications. Features and benefits High blocking voltage capability• Isolated package• Less sensitive gate for improved noise immunity• Planar passivated for voltage ruggedness and reliability• Triggering in all four quadrants Applications General purpose motor control• General purpose switching Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 65 A
IT(RMS) RMS on-state current full sine wave; Th ≤ 88 °C; Fig. 1; Fig. 2;
Fig. 3 - 6 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 5 35 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 8 35 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 11 35 mA
IGT gate trigger current 30 70 mA
NXP Semiconductors BT236X-600
4Q Triac Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate n.c. mounting base; isolated21
TO-220F (SOT186A)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT236X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A
NXP Semiconductors BT236X-600
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 88 °C; Fig. 1; Fig. 2;
Fig. 3 6 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 65 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 71 A2t I2 t for fusing tp = 10 ms; SIN - 21 A2s
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT236X-600
4Q Triac
003aab309
10-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
f = 50 Hz; Th = 88 °C
Fig. 1. RMS on-state current as a function of surgeduration; maximum values
003aab310
-50 0 50 100 150Th (°C)
IT(RMS)
(A) 88°C
Fig. 2. RMS on-state current as a function of heatsinktemperature; maximum values
003aab307
Th (max)
(°C) 2 4 6 I T(RMS) (A)
Ptot
(W)
125= 180°
120°
90°
60°
30°
conductionangle(degrees)
formfactora60901201802.82.21.91.57
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors BT236X-600
4Q Triac
003aaa968
ITSM
number of cycles1 10310210
(A)
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab308
10
102
103
10-5 10-4 10-3 10-2 10-1tp(s)
ITSM(A)
(1)
(2)
ITSM
Tj(init) = 25 °C max
tp ≤ 20 ms
(1) dIT/dt limit
NXP Semiconductors BT236X-600
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full or half cycle; without heatsink
compound; Fig. 6 - 4.5 K/WRth(j-h) thermal resistance
from junction toheatsink full or half cycle; with heatsink
compound; Fig. 6 - 6.5 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 55 - K/W
003aab331
tp (s)10-5 1 1010-110-210-4 10-3-1
Zth(j-h)
(K/W)
(1)
(2)
(3)
(4)
(1) Unidirectional (half cycle) without heatsink compound(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width Max Unit 2500 V - pF
NXP Semiconductors BT236X-600
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 5 35 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 8 35 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 11 35 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 30 70 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 7 30 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 16 45 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 5 30 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 7 45 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 5 20 mA on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
100 250 - V/µs
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 95 °C; dIcom/dt = 3.6 A/
ms; IT = 6 A; gate open circuit 20 - V/µs
tgt gate-controlled turn-ontime ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT236X-600 \|BT236X600	NXP	N/a	50	avai	4Q Triac