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BT168G
SCR
-92 BT168G
SCR 14 March 2014 Product data sheet General descriptionPlanar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92)plastic package. This SCR is designed to be interfaced directly to microcontrollers, logicICs and other low power gate trigger circuits.
Features and benefits Guaranteed minimum gate trigger current limit• Enhanced voltage capability• Planar passivated for voltage ruggedness and reliability• Sensitive gate• Direct triggering from low power gate circuits and logic ICs
Applications Ground Fault Interrupters (GFI)• Leakage Current Circuit Breakers (LCCB)• Residual Current Devices (RCD)
Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max UnitVDRM repetitive peak off-state voltage - - 600 V
VRRM repetitive peak reversevoltage - - 600 V
ITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 8 A
IT(AV) average on-state
current
half sine wave; Tlead ≤ 83 °C; Fig. 1 - - 0.5 A
IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3 - 0.8 A
Static characteristics 50 200 µA
NXP Semiconductors BT168G
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol A anode G gate K cathode23
TO-92 (SOT54)sym037 K
Ordering information
Table 3. Ordering information
PackageType number
Name Description VersionBT168G TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
NXP Semiconductors BT168G
SCR Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max UnitVDRM repetitive peak off-state voltage - 600 V
VRRM repetitive peak reverse voltage - 600 V
IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 - 0.5 A
IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3 0.8 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 8 AITSM non-repetitive peak on-statecurrent
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 9 A2t I2 t for fusing tp = 10 ms; SIN - 0.32 A2s
dIT/dt rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/ 50 A/µs
IGM peak gate current - 1 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
001aab446
Ptot(W)
125 0.6
Tlead(max)(°C)
a = 1.57
NXP Semiconductors BT168G
SCR001aab449
IT(RMS)(A)
surge duration (s)10-2 10-1 101
f = 50 Hz; Tlead = 83 °C
Fig. 2. RMS on-state current as a function of surgeduration for sinusoidal currentsTlead (°C)-50 1501000 50
001aab450
IT(RMS)(A)
83 °C
Fig. 3. RMS on-state current as a function of lead
temperature; maximum values001aab499
ITSM(A)
number of cycles1 10310210
Tj(init) = 25 °C max ITSM
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
NXP Semiconductors BT168G
SCR001aab497
tp (s)10-5 10-210-310-4
ITSM(A)
Tj(init) = 25 °C max ITSM
tp ≤ 10 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
NXP Semiconductors BT168G
SCR Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max UnitRth(j-lead) thermal resistance
from junction to lead
Fig. 6 - - 60 K/W
Rth(j-a) thermal resistance
from junction toambient
printed circuit board mounted: lead
length = 4 mm 150 - K/W
001aab451
Zth(j-lead)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
NXP Semiconductors BT168G
SCR Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristicsIGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7 50 200 µA latching current VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ;
Tj = 25 °C; Fig. 8 2 6 mA holding current VD = 12 V; RGK = 1 kΩ; Tj = 25 °C;
Fig. 9 2 5 mA on-state voltage IT = 1.2 A; Tj = 25 °C; Fig. 10 - 1.25 1.7 V
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 11 0.5 0.8 VVGT gate trigger voltage
VD = 600 V; IT = 10 mA; Tj = 125 °C;
Fig. 11
0.2 0.3 - V off-state current VD = 600 V; Tj = 125 °C; RGK 1 kΩ - 0.05 0.1 mA reverse current VR = 600 V; Tj = 125 °C; RGK 1 kΩ - 0.05 0.1 mA
Dynamic characteristicsVDM = 402 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12
500 800 - V/µsdVD/dt rate of rise of off-statevoltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12 25 - V/µs
tgt gate-controlled turn-ontime ITM = 2 A; VD = 600 V; IG = 10 mA; dIG/
dt = 0.1 A/µs; Tj = 25 °C 2 - µs commutated turn-offtime VDM = 402 V; Tj = 125 °C; ITM = 1.6 A;
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of
VDRM) 100 - µs
