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BT150500RN/a546avaiSCR
BT150-500R |BT150500RNXPN/a206avaiSCR


BT150500R ,SCRGeneral descriptionPlanar passivated SCR with sensitive gate in a SOT78 (TO-220AB) plastic package. ..
BT150-500R ,SCR
BT150-500R ,SCR
BT150-500R ,SCRApplications• General purpose switchingProtection Circuits•4. Quick reference dataTable 1. Quick re ..
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BT150500R-BT150-500R
SCR
TO-220AB BT150-500R
SCR 13 March 2014 Product data sheet General description

Planar passivated SCR with sensitive gate in a SOT78 (TO-220AB) plastic package. Thisdevice is intended to be interfaced directly to microcontrollers, logic integrated circuitsand other low power gate trigger circuits. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Applications General purpose switching• Protection Circuits Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-
state voltage
[1] - - 500 V
VRRM repetitive peak reverse
voltage - 500 V
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 35 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 113 °C; Fig. 2;
Fig. 3 - 4 A
Static characteristics
- 15 200 µA
[1] Although not recommended, off-state voltages up to 800V may be applied without damage, but thethyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
NXP Semiconductors BT150-500R
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
K cathode A anode G gate A mounting base; connected toanode2
TO-220AB (SOT78)

sym037 K Ordering information
Table 3. Ordering information
PackageType number
Name Description Version

BT150-500R TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors BT150-500R
SCR Limiting values
Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage [1] - 500 V
VRRM repetitive peak reverse voltage - 500 V
IT(AV) average on-state current half sine wave; Tmb ≤ 113 °C; Fig. 1 - 2.5 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 113 °C; Fig. 2;
Fig. 3 4 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 35 AITSM non-repetitive peak on-statecurrent
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 38 A2t I2 t for fusing tp = 10 ms; SIN - 6.1 A2s
dIT/dt rate of rise of on-state current IT = 10 A; IG = 50 mA; dIG/dt = 50 mA/ 50 A/µs
IGM peak gate current - 2 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature [2] - 125 °C
[1] Although not recommended, off-state voltages up to 800V may be applied without damage, but thethyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.[2] Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
NXP Semiconductors BT150-500R
SCR

aaa-011899
Ptot(W)
lT(AV) (A)0 3210.5 2.51.5
conductionangle(degrees)
formfactora60901201802.82.21.91.57= 1.57
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values

Tmb (°C)-50 1501000 50
aaa-011901
lT(RMS)(A)
113°C
Fig. 2. RMS on-state current as a function of mountingbase temperature; maximum values

aaa-011896lT(RMS)(A)
surge duration (s)10-2 10110-1
f = 50 Hz; Tmb = 113 °C
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
NXP Semiconductors BT150-500R
SCR

aaa-011897
lTSM(A)
number of cycles1 10310210
Tj(init) = 25 °C max ITSM
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values

aaa-011898
tp (s)10-5 10-210-310-4
lTSM(A)
Tj(init) = 25 °C max ITSM
(1)
tp ≤ 10 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
NXP Semiconductors BT150-500R
SCR Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 6 - - 2.5 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 60 - K/W
aaa-011908
tp (s)10-5 1 1010-110-210-4 10-3
Zth(j-mb)(K/W)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors BT150-500R
SCR Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 15 200 µA latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - 0.17 10 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 0.1 6 mA on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.23 1.8 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.4 1 VVGT gate trigger voltage
VD = 500 V; IT = 0.1 A; Tj = 110 °C;
Fig. 11
0.1 0.2 - V off-state current VD = 500 V; Tj = 125 °C - 0.1 0.5 mA reverse current VR = 500 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics

dVD/dt rate of rise of off-state
voltage
VDM = 335 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12 50 - V/µs
tgt gate-controlled turn-ontime ITM = 10 A; VD = 500 V; IG = 5 mA; dIG/
dt = 0.2 A/µs; Tj = 25 °C 2 - µs commutated turn-offtime VDM = 335 V; Tj = 125 °C; ITM = 8 A;
VR = 10 V; (dIT/dt)M = 10 A/µs; dVD/
dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of
VDRM) 100 - µs
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