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BT138X-600 |BT138X600PHILIPSN/a200avai4Q Triac
BT138X-600F |BT138X600FPHILIPSN/a171avaiTriacs
BT138X800N/a153avaiTriacs
BT138X-800 |BT138X800PHILIPSN/a4avaiTriacs
BT138X-800F |BT138X800FPHLIPSN/a1130avai4Q Triac


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BT138X-600-BT138X-600F-BT138X800-BT138X-800-BT138X-800F
Triacs
Philips Semiconductors Product specification
Triacs BT138X series
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacsina full pack plastic SYMBOL PARAMETER MAX. MAX. UNIT
envelope, intended for use inapplications requiring high bidirectional BT138X- 600 800
transient and blocking voltage capability BT138X- 600F 800F
and high thermal cycling performance.Typical applications include motor VDRM Repetitive peak off-state 600 800 V
control, industrial and domestic lighting, voltages
heating and static switching. IT(RMS) RMS on-state current 12 12 AITSM Non-repetitive peak on-state 95 95 A
current
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
main terminal 1 main terminal 2 gate
case isolated
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800

VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Ths ≤ 56 ˚C - 12 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A2 tI2 t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
case
Philips Semiconductors Product specification
Triacs
BT138X series
ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138X- ... ...F

IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 mA
T2+ G- - 8 35 25 mA
T2- G- - 10 35 25 mA
T2- G+ - 22 70 70 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 40 40 mA
T2+ G- - 20 60 60 mA
T2- G- - 8 40 40 mA
T2- G+ - 10 60 60 mA Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 mA On-state voltage IT = 15 A - 1.4 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
Philips Semiconductors Product specification
Triacs
BT138X series
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138X- ... ...F

dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 250 - V/μs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 20 - V/μs
commutating voltage IT(RMS) = 12 A;
dIcom/dt = 5.4 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max);- - 2 - μs
time IG = 0.1 A; dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Triacs
BT138X series
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 56˚C.
Fig.6. Normalised gate trigger voltage 5 10 150
IT(RMS) / A
Ptot / W Ths(max) / C
-50 0 50 100 1500
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs
BT138X series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-hs (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 50 100 1501
Tj / C
dV/dt (V/us)
Philips Semiconductors Product specification
Triacs
BT138X series
MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes

1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3
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