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Partno	Mfg	Dc	Qty	Available	Descript
BSV52	ST	N/a	3000	avai	NPN switching transistor
BSV52	PHILIPS	N/a	20	avai	NPN switching transistor
BSV52	FAIRCHILD	N/a	3000	avai	NPN switching transistor
BSV52	NXP	N/a	2033	avai	NPN switching transistor
BSV52	NXP/PHILIPS	N/a	3000	avai	NPN switching transistor

BSV52 ,NPN switching transistorELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)caseSymbol Parameter Test Conditions ..
BSV52 ,NPN switching transistorapplications, especially in portable equipment.handbook, halfpageDESCRIPTION 33NPN switching transi ..
BSV52 ,NPN switching transistor
BSV52 ,NPN switching transistor
BSV52 ,NPN switching transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSV52LT1 ,Switching Transistor2BSV52LT1INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGEMINIMUM RECOMMENDED FOOTPRINT FOR SU ..
BZT55C2V4 ,ZENER DIODESFeatures

BSV52
NPN switching transistor
BSV52
SO2369/SO2369A
SMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIALPLANAR NPN
TRANSISTORS MINIATUREPLASTIC PACKAGE FOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS LOW CURRENT, FAST SWITCHING
APPLICATIONS.
INTERNAL SCHEMATIC DIAGRAM
March 1996
SOT-23
Type Marking
BSV52 B2
SO2369 N11
SO2369A N81
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
SO2369/A BSV52
VCES Collector-Emitter Voltage (VBE =0) 40 20 V
VCBO Collector-Base Voltage(IE =0) 40 20 V
VCEO Collector-Emitter Voltage(IB =0) 15 12 V
VEBO Emitter-Base Voltage(IC =0) 4.5 5 V
ICM Collector Peak Current 0.2 A
Ptot Total DissipationatTc =25oC 200 mW
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
1/5
THERMAL DATA
Rthj-amb•
Rthj-SR•
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Substrate Max
400 C/W C/W Mountedona ceramic substrate area=7x5x 0.5mm
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current(IE =0)
VCB =20V
for SO2369/SO2369A
VCB =10V
for BSV52
VCB =10V Tj= 150oC
for BSV52
ICES Collector Cut-off
Current (VBE =0)
VCB =20V
for SO2369A 400 nA
V(BR)CES∗ Collector-Emitter
Breakdown Voltage
(IB =0) =10μA
for SO2369/SO2369A
for BSV52
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =10 mA
for SO2369/SO2369A
for BSV52
V(BR)CBO∗ Collector-Base
Breakdown Voltage
(IB =0) =10μA
for SO2369/SO2369A
for BSV52
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC =0) =10μA
for SO2369/SO2369A
for BSV52
VCE(sat)∗ Collector-Emitter
Saturation Voltage =10 mA IB =0.3 mA
for BSV52 =10 mA IB =1 mA
for SO2369A
for BSV52 =30 mA IB =3 mA
for SO2369 BSV52 =50 mA IB =5 mA
for BSV52 =100 mA IB =10 mA
for SO2369A
VBE(sat)∗ Collector-Base
Saturation Voltage =10 mA IB =1 mA =30 mA IB =3 mA
for SO2369A =50 mA IB =5 mA
for BSV52 =100 mA IB =10 mA
for SO2369A
0.7 0.85
hFE∗ DC Current Gain IC =1mA VCE =1V for BSV52 =10mA VCE =0.35V for SO2369A =10mA VCE =1V for All types =30mA VCE =0.4V for SO2369A =50mA VCE =1V for BSV52 =100mA VCE =1V for SO2369A =100mA VCE =2V for SO2369
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 2%
BSV52/SO2369/SO2369A
2/5
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit Transition Frequency IC =10 mA VCE= 10Vf= 100MHz
for SO2369A
for BSV52/SO2369
MHz
MHz
CCB Collector Base
Capacitance =0 VCE =5V f =1 MHz 4 pF
CEB Emitter Base
Capacitance =0 VEB =1V f =1 MHz
for BSV52
4.5 pF
ton Turn On Time IC =10 mA VBE =-0.5V =3 mA ns Storage Time IC =10 mA IB1 =-IB2 =10mA 13 ns
toff Turn Off Time IC =10 mA IB1 =3 mA
IB2= -1.5 mA ns
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 2%
BSV52/SO2369/SO2369A
3/5
DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX. 0.85 1.1 33.4 43.3 0.65 0.95 25.6 37.4 1.20 1.4 47.2 55.1 2.80 3 110.2 118 0.95 1.05 37.4 41.3 1.9 2.05 74.8 80.7 2.1 2.5 82.6 98.4 0.38 0.48 14.9 18.8 0.3 0.6 11.8 23.6 0 0.1 0 3.9 0.3 0.65 11.8 25.6 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
BSV52/SO2369/SO2369A
4/5
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consequencesofuse ofsuch informationnorfor anyinfringementof patentsor otherrightsof third parties which may resultsfromits use.No
licenseis grantedby implicationor otherwise underany patentor patentrightsof SGS-THOMSON Microelectronics. Specifications mentionedthis publicationare subjectto change without notice.This publication supersedes andreplacesall information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor useascriticalcomponentsin lifesupportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectonics. 1995 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
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BSV52/SO2369/SO2369A
5/5
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