BSS81 ,NPN Silicon Switching TransistorsCharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 40 - -BSS79C B35 - ..
BSS82C ,PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
BSS83P ,P-Channel SIPMOS Small-Signal Transistor
BSS84AK ,50 V, 180 mA P-channel Trench MOSFETApplications Relay driver High-side loadswitch High-speed line driver Switching circuits1.4 Qui ..
BSS84DW , DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84LT1 ,Power MOSFET 130 mAmps, 50 Voltsmanagement circuitry. Typical applications are DC−DC converters,load switching, power management in ..
BZT52C47-7-F , SURFACE MOUNT ZENER DIODE
BZT52C4V3S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C4V3S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52-C4V3S , 200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-323 PACKAGE
BZT52C4V7 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C4V7S , Planar Die Construction Ultra-Small Surface Mount Package
BSS81
NPN Silicon Switching Transistors
BSS79, BSS81
NPN Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 (PNP)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BSS79, BSS81
DC Characteristics
BSS79, BSS81
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
Test circuits
Delay and rise timeStorage and fall timeEHN00045
Osc.
EHN00046
Osc.
-3.0μ500~s
< 5 ns
Oscillograph: R > 100k
C < 12pF
tr < 5ns
BSS79, BSS81
Collector-base capacitance C = f (VCB)
f = 1MHz
EHP0067210V5-10120
Total power dissipation Ptot = f(TS)
30
60
90
120
150
180
210
240
270
300
360
tot
Transition frequency fT = f (IC)CE = 20V
EHP00674231
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
BSS79, BSS81
DC current gain hCE
EHP00676mA11010-10123
Saturation voltage I)FE = 102V
BE sat0
CE satV,
Storage time tstg = f (IC)
Fall time tf = f (IC)
EHP00678
stg1123,
Delay time td = f (IC)
Rise time tr = f (IC)10231t,
This datasheet has been downloaded from:
www.ic-phoenix.com
Datasheets for electronic components.
