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Partno	Mfg	Dc	Qty	Available	Descript
BSS670S2L	INFINEON	N/a	33000	avai	Low Voltage MOSFETs

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BSS670S2L
Low Voltage MOSFETs
BSS670S2L
OptiMOSâ Buck converter series
Product Summary
Feature N-Channel Enhancement mode Logic Level
SOT 23
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
BSS670S2L
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
BSS670S2L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
BSS670S2L
1 Power dissipation
Ptot = f (TA)
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.38 BSS670S2L
tot
2 Drain current
ID = f (TA)
parameter: VGS³ 10 V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.6 BSS670S2L
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
BSS670S2L
thJS
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-3 10
-2 10
-1 10 10 10
BSS670S2L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
0.5
1.5
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
100
200
300
400
500
600
700
800
900
1000
1100
1200
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
BSS670S2L
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 270 mA, VGS = 10 V
200
400
600
800
1000
1200
1400
1600 BSS670S2L
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: Tj , tp = 80 µs
-2 10
-1 10 10 10
BSS670S2L

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