IC Phoenix
 
Home ›  BB28 > BSS295,N-Channel SIPMOS Small-Signal Transistor
BSS295 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BSS295INFINEONN/a330avaiN-Channel SIPMOS Small-Signal Transistor
BSS295西门子N/a4726avaiN-Channel SIPMOS Small-Signal Transistor
BSS295seimensN/a11845avaiN-Channel SIPMOS Small-Signal Transistor


BSS295 ,N-Channel SIPMOS Small-Signal TransistorCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BSS295 ,N-Channel SIPMOS Small-Signal Transistor BSS 295 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Logic Level• V = 0 ..
BSS295 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 50 - -GS D ..
BSS297 ,N-Channel SIPMOS Small-Signal Transistor BSS 297 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Logic Level• V = 0 ..
BSS38 , NPN SILICON TRANSISTOR
BSS44 ,SILICON NPN TRANSISTORBSS44®SILICON PNP TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ PNP TRANSISTORDESCRIPTION ..
BZT52C33-7-F , SURFACE MOUNT ZENER DIODE
BZT52C33S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C33S-7-F , SURFACE MOUNT ZENER DIODE
BZT52C36 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C36-7-F , SURFACE MOUNT ZENER DIODE
BZT52C36S , Planar Die Construction Ultra-Small Surface Mount Package


BSS295
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 295
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level I 2
q VGSM = 0.8...2.0V 3 VPT05548
Pin 1 Pin 2 Pin 3
Type VDS ID RDs(on) Package Marking
BSS 295 50 V 1.4 A 0.3 n TO-92 SS 295
Type Ordering Code Tape and Reel Information
BSS 295 Q67000-S238 E6288
BSS 295 Q67000-S105 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage ls 50 V
Drain-gate voltage VDGR
RGS = 20 kg 50
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 24 ( 1.4
DC drain current, pulsed leuls
TA = 25 ( 5.6
Power dissipation Ptot W
TA = 25 ( 1
Data Sheet 05.99
!eiy,f,i,y,tty,
ec no 09y
BSS 295
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
-55 ... + 150
Storage temperature
-55 ... + 150
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
55/150/56
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter
Symbol
Values
Static Characteristics
Drain- source breakdown voltage
VGS = O V, ID = 0.25 mA, T]: 25 (
V(BR)DSS
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
Zero gate voltage drain current
bbs=50V, VGS=OV, T] =25 (
VDS=5OV, Vss=0V, 7] =125 "C
bbs=30V, VGS=0V, 7] =25 (
Gate-source leakage current
VGS=20V, VDS=0V
Drain-Source on-state resistance
VGS = 4.5V, b =1.4A
RDS(on)
Data Sheet
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED