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BSS284
P-Channel SIPMOS Small-Signal Transistor
BSS 284
SIPMOS ® Small-Signal Transistor• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-1.6 V
Maximum Ratings
BSS 284
Maximum Ratings1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BSS 284
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BSS 284
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BSS 284
Power dissipation tot = ƒ(TA)20406080100120°C160A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
0.40 tot
Drain current D = ƒ(TA)
parameter: VGS ≥ -10 V20406080100120°C160A
0.00
-0.01
-0.02
-0.03
-0.04
-0.05
-0.06
-0.07
-0.08
-0.09
-0.10
-0.11
-0.12
-0.14 D
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage (BR)DSS = ƒ(Tj)
-45
-46
-47
-48
-49
-50
-51
-52
-53
-54
-55
-56
-57
-58
-60 (BR)DSS
BSS 284
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs , Tj = 25 °C
0.0-1.0-2.0-3.0-4.0V-5.5DS
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-0.14
-0.16
-0.18
-0.20
-0.22
-0.24
-0.26
-0.30 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: tp = 80 μs, Tj = 25 °C
0.00-0.04-0.08-0.12-0.16A-0.24D
12
16
20
24
32 DS (on)
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 μsDS≥ 2 x ID x RDS(on)max
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.9 D
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.02
0.04
0.06
0.08
0.10
0.12
0.16 fs
