BSS223PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 1.2 ΩDS(on)• Enhancement modeI -0.39 AD• Super Logic Level (2.5 V rate ..
BSS225 , SIPMOS® Small-Signal-Transistor
BSS229 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) BSS 229
BSS223PW
Low Voltage MOSFETs
Preliminary dataBSS 223PW
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSS 223PW
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSS 223PW
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSS 223PW
1 Power dissipationtot = f (TA)
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
BSS 223PW
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
-0.42 BSS 223PW
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10
BSS 223PW
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
BSS 223PW
thJA
Preliminary dataBSS 223PW
5 Typ. output characteristicD = f (VDS)
parameter: Tj =25°C
0.1
0.2
0.3
0.4
0.5
0.7
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.5
1.5
2.5
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.7
8 Typ. forward transconductancefs = f(ID)
parameter: T = 25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
Preliminary dataBSS 223PW
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -0.39 A, VGS = -4.5 V
0.2
0.4
0.6
0.8
1.2
1.6
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.6
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz; T10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-2 -10
-1 -10 -10 -10
BSS 223PW
