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Partno	Mfg	Dc	Qty	Available	Descript
BSS192P	INFINEON	N/a	3000	avai	Low Voltage MOSFETs

BSS192P ,Low Voltage MOSFETsFeatureV -250 VDS• P-ChannelR 12 ΩDS(on)• Enhancement modeI -0.19 AD• Logic LevelSOT89• dv/dt rated ..
BSS209PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 550 mΩDS(on)• Enhancement modeI -0.58 AD• Super Logic Level (2.5 V rat ..
BSS223PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 1.2 ΩDS(on)• Enhancement modeI -0.39 AD• Super Logic Level (2.5 V rate ..
BSS225 , SIPMOS® Small-Signal-Transistor
BSS229 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) BSS 229

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BSS192P
Low Voltage MOSFETs
Preliminary dataBSS 192 P
SIPMOS Small-Signal-TransistorProduct Summary
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt ratedSOT89
Preliminary dataBSS 192 P
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSS 192 P
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSS 192 P
1 Power dissipationtot = f (TA)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
BSS 192 P
tot
2 Drain currentD = f (TA)
parameter: |VGS| ≥ 10V
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0.14
-0.16
-0.2 BSS 192 P
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25°C
-3 -10
-2 -10
-1 -10 -10 -10
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10 10
BSS 192 P
thJA
Preliminary dataBSS 192 P
5 Typ. output characteristicD = f (VDS)
parameter: Tj =25°C, -VGS
0.1
0.2
0.3
0.4
0.5
0.7
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS; Tj =25°C, -VGS
1.5
4.5
7.5
10.5
12
15
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.7
8 Typ. forward transconductancefs = f(ID)
parameter: T =25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.8
Preliminary dataBSS 192 P
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = -0.19 A, VGS = -10 V
12
16
20
24
32 BSS 192 P
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, T10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-3 -10
-2 -10
-1 -10 -10
BSS 192 P

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