BSS138N ,Low Voltage MOSFETsFeaturesV 60 VDS• N-channelR 3.5ΩDS(on),max• Enhancement modeI 0.23 AD• Logic level• dv /dt ratedSO ..
BSS138P ,60 V, 360 mA N-channel Trench MOSFETApplications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quic ..
BSS138PW ,60 V, 360 mA N-channel Trench MOSFETApplications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quic ..
BSS145 , SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSS145 E7652 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 65 - -GS D ..
BSS145 E6327 ,N-Channel SIPMOS Small-Signal Transistor BSS 145 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• V = 1.4 ...2.3 VGS ..
BZT52C24S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52-C24S , 200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-323 PACKAGE
BZT52C24S-7-F , SURFACE MOUNT ZENER DIODE
BZT52C24T , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C27 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C27 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BSS138N
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
SIPMOS® Small-Signal-Transistor
Features
. N-channel
. Enhancement mode
. Logic level
. dv/dt rated
BSS138N
Product Summary
V03 60 V
RDS(on),max 3.5
l D 0.23 A
drain pin3
source pin 2
Type Package Ordering Code Tape and Reel Information Marking
BSS138N SOT-23 Q67042-S4184 E6327: 3000 pcs/reel SKs
BSS138N SOT-23 Q67042-S4190 E6433: 10000 pcs/reel SKs
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TA=25 'C 0.23 A
TA=7O 'C 0.18
Pulsed drain current lepuBe TA=25 'C 0.92
ID=0.23 A, VDS=48 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=150 ''C
Gate source voltage Vss ur20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1
Power dissipation Pm, TA=25 'C 0.36 W
Operating and storage temperature Ti, Tstg -55 ... 150 "C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 2.1 page 1 2004-04-15
CP""''"
Infineon
lechnologies
BSS138N
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RNA - - 350 KAN
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR,DSS VGS= 0 V, ID=250 pA 60 - - V
Gate threshold voltage Vsso) VGS=VDSv ID=26 pA 0.6 1.0 1.4
. VDS=60 V,
Drain-source leakage current ID (off) VGS=O V, Tr=25 o C - - 0 1 pA
VDS=60 V,
b'ss=0 V, Tj=150 'C - 10 100
Gate-source leakage current less Vss--20 V, Vos=0 V - 1 10 nA
Drain-source on-state resistance Rros(on) Vss--4.5 V, ID=0.03 A - 3 3 4.0 Q
VGS=4.5 V, ID=0.19 A - 3.5 6 0
VGS=10 V, ID=0.23 A - 2.2 3 5
IVDS|>2|lD|RDS(on)maxa
Transconductance " ID=0.18 A 0.1 0.2 - S
Rev. 2.1 page 2 2004-04-15
