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BSR57
N-Channel Low-Frequency Low-Noise Amplifier
BSR57 BSR57 N-Channel Low-Frequency Low-Noise 3 Amplifier This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark: M5 1. Drain 2. Source 3. Gate Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Drain-Gate Voltage 40 V DGO V Gate-Source Voltage - 40 V GSO I Forward Gate Current 50 mA GF P Total Power Dissipation up to T =40°C 250 mW tot amb T Storage Temperature Range - 55 ~ 150 °C STG T Junction Temperature 150 °C J Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Gate-Source Voltage V = 0V, I = 1.0μA40 V GSS DS C I Gate Reverse Current V = 20V, V = 0V 1.0 nA GSS GS DS I Zero-Gate Voltage Drain Current V = 15V, V = 0V 20 100 mA DSS DS GS V (off) Gate-Source Cut-off Voltage V = 15V, I = 0.5nA 2.0 6.0 V GS DS D V (on) Drain-Source On Voltage V = 0V, I = 10mA 0.5 V DS GS D r (on) Drain-Source On Reverse V = 0V, I = 0 40 Ω ds GS D C Reverse Transfer Capacitance V = 0V, V = 10V 5.0 pF rss DS GS t Delay Time V = 10V, V (on) = 0V 6.0 ns d DD GS I = 10mA, V (off) = 6.0V t Rise Time D GS 4.0 ns r t Turn-off Time 50 ns off ©2003 Rev. A, February 2003
