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BSR50
NPN Darlington Transistor
BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Collector-Emitter Voltage 45 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C T , T Storage Temperature -55 ~ 150 °C J STG Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 45 V CEO C B BV Collector-Base Breakdown Voltage I = 100μA, I = 0 60 V CBO C B BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 5 V EBO E C I Collector Cut-off Current V = 45V, I = 0 50 nA CBO CB E I Emitter Cut-off Current V = 4.0V, I = 0 50 nA EBO EB C h DC Current Gain V = 10V, I = 150mA 1,000 FE CE C V = 10V, I = 0.5A 2,000 CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 500μA 1.3 V CE C B = 1.0A, I = 4.0mA 1.6 I C B V (sat) Base-Emitter Saturation Voltage I = 500mA, I = 500μA 0.9 V BE C B I = 1.0mA, I = 4.0mA 2.2 C B Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2002 Rev. A, May 2002
