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BSP76
Smart Low Side Switches
HITFET �� II.Generation BSP 76
Smart Lowside Power Switch
Product Summary
Features� Logic Level Input
� Input Protection (ESD)
� Thermal shutdown with
auto restart
� Overload protection
� Short circuit protection
� Overvoltage protection
� Current limitation
� Analog driving possible
Application� All kinds of resistive, inductive and capacitive loads in switching
or linear applications
� µC compatible power switch for 12 V DC applications
� Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart SIPMOS� technology. Fully protected by embedded
protection functions.
Vbb
BSP 76
Thermal resistanceFor input voltages beyond these limits I IN has to be limited.not subject to production test, specified by designVLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
BSP 76
Electrical Characteristics
CharacteristicsDevice switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
BSP 76
Electrical Characteristics
Dynamic Characteristics
Protection Functions1)
Inverse DiodeIntegrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
BSP 76DSj
BSP 76
1 Maximum allowable power dissipationtot = f(TS) resp. tot = f(TA) @ RthJA=72 K/W10
tot
2 On-state resistanceON = f(Tj); ID=1.4A; VIN=10V
50
100
150
200
250
300
350
400
500
DS(on)
3 On-state resistanceON = f(Tj); ID= 1.4A; VIN=5V
50
100
150
200
250
300
350
400
500
DS(on)
4 Typ. input threshold voltageIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
GS(th)
