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BSP75N
Smart Low Side Switches
Smart Lowside Power Switch
HITFET�
BSP75N
Data Sheet V1.0
FeaturesLogic Level InputInput protection (ESD)Thermal shutdown with auto restartOverload protectionShort circuit protectionOvervoltage protectionCurrent limitation
ApplicationAll kinds of resistive, inductive and capacitive loads in switching applicationsµC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
PowernetReplaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart Power Technology. Fully protected by embedded
protection functions.
Product Summary
Figure1Block Diagram
Figure2Pin Configuration
Pin Definitions and Functions
Circuit DescriptionThe BSP75N is a monolithic power switch in Smart Power Technology (SPT) with a
logic level input, an open drain DMOS output stage and integrated protection functions.
It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive
and industrial applications.
Protection FunctionsOver voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min.
60V) when inductive loads are switched off.
Current limitation: By means of an internal current measurement the drain current islimited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates
in the linear region, so power dissipation may exceed the capability of the heatsink.
This operation leads to an increasing junction temperature until the over temperature
threshold is reached.
Over temperature and short circuit protection: This protection is based on sensingthe chip temperature. The location of the sensor ensures a fast and accurate junction
temperature detection. Over temperature shutdown occurs at minimum 150°C. A
hysteresis of typ. 10 K enables an automatic restart by cooling.
The device is ESD protected according Human Body Model (4kV) and load dump
protected (see Maximum Ratings).
Absolute Maximum Ratingsj = 25 °C, unless otherwise specified
Thermal ResistanceSee also Figure
7 and Figure10.VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page
7.RI = internal resistance of the load dump test pulse generator LD200.
Electrical Characteristicsj = 25 °C, unless otherwise specified
Static Characteristics
Dynamic Characteristics 1)
Protection Functions2)
Inverse DiodeSee also Figure
9.Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous, repetitive operation.
Electrical Characteristics (cont’d)j = 25 °C, unless otherwise specified
EMC-CharacteristicsThe following EMC-Characteristics outline the behavior of typical devices. They are not
part of any production test.
Table1Test Conditions
Fast electrical transientsacc. to ISO 7637The test pulses are applied at VS
Definition of functional status
