BSP62T1 ,MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT**Order this documentSEMICONDUCTOR TECHNICAL DATAby BSP62T1/D* Motorola Preferred Device* *This PNP ..
BSP742R ,Smart Power High-Side-SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BSP742-R ,Smart High Side SwitchesBlock Diagram+ VbbVoltageGateOvervoltage Currentsourceprotection limit protectionVLogicOUTLimit for ..
BSP742RI ,Smart Power High-Side-SwitchFeaturesOvervoltage protection V 41 V• Overload protectionbb(AZ)• Current limitation Operating volt ..
BSP742-RI ,Smart High Side SwitchesBlock Diagram+ VbbVoltageGateOvervoltage Currentsourceprotection limit protectionVLogicOUTLimit for ..
BSP742RI . ,Smart Power High-Side-SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BZM55C5V6 ,ZENER DIODESFeatures
BSP62T1
MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
--This PNP small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The device is
housed in the SOT-223 package which is designed for medium power surface mount
applications. The SOT-223 Package can be soldered using wave or reflow. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die Available in 12 mm Tape and Reel
Use BSP62T1 to order the 7 inch/1000 unit reel.
Use BSP62T3 to order the 13 inch/4000 unit reel. NPN Complement is BSP52T1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
DEVICE MARKING
THERMAL CHARACTERISTICS Device mounted on a FR–4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist CompanyCOLLECTOR 2,4
BASE
EMITTER 3
