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BSP603S2LInfineonN/a32000avaiLow Voltage MOSFETs


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BZM55C3V9 ,ZENER DIODESAbsolute Maximum RatingsT = 25

BSP603S2L
Low Voltage MOSFETs
BSP603S2L
OptiMOS
 Power-Transistor
Product Summary
Feature

• N-Channel
• Enhancement mode
• Logic Level
SOT 223
Maximum Ratings, at T
j = 25 °C, unless otherwise specified
BSP603S2L
Thermal Characteristics
Characteristics
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
Static Characteristics
BSP603S2L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
BSP603S2L
1 Power dissipation
tot = f (TC)
parameter: VGS≥ 4 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.4 BSP603S2L
tot
2 Drain current
D = f (TC)
parameter: VGS≥ 10 V
0.5
1.5
2.5
3.5
4.5 BSP603S2L
4 Max. transient thermal impedance
thJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSP603S2L
thJC
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC = --
-2 10
-1 10 10 10 10
BSP603S2L
5 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
11
13 BSP603S2L
6 Typ. drain-source on resistance
DS(on) = f (ID)
parameter: VGS
10
20
30
40
50
60
70
80
90
110
BSP603S2L
DS(on)
7 Typ. transfer characteristics
D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
11
8 Typ. forward transconductance
fs = f(ID); Tj=25°C
parameter: gfs
10
12
14
16
18
20
22
BSP603S2L
9 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 2.6 A, VGS = 10 V
10
20
30
40
50
60
70
80
100 BSP603S2L
DS(on)
10 Typ. gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diode
F = f (VSD)
parameter: T
-1 10 10 10 10
BSP603S2L
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