BSP316P ,Low Voltage MOSFETsFeatureV -100 VDS• P-ChannelR 1.8 ΩDS(on)• Enhancement modeI -0.68 AD• Logic LevelP-SOT223-4-1• dv/ ..
BSP317 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP317 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP317 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP318S ,N-Channel SIPMOS Small-Signal TransistorFeaturesProduct Summary• N-Channel Drain source voltage V 60 VDS• Enhancement modeDrain-Source on-s ..
BSP319 ,SIPMOS Small-Signal Transistor BSP 319 ® SIPMOS Small-Signal Transistor• N channel Enhancement mode Logic Level Avala ..
BZG05C56 ,Silicon Z-DiodesBZG05C...Vishay TelefunkenSilicon Z–Diodes
BZG05C5V1 ,Silicon Z-DiodesApplicationsVoltage stabilization
BZG05C5V6TR , Zener Diodes
BZG05C62 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP316P
Low Voltage MOSFETs
Preliminary dataBSP 316 P
SIPMOS Small-Signal-Transistor
Product Summary
Feature• P-Channel
• Enhancement mode
• Logic Level
• dv/dt ratedP-SOT223-4-1
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Preliminary dataBSP 316 P
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Preliminary dataBSP 316 P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSP 316 P
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.9 BSP 316 P
tot
2 Drain currentD = f (TA)
parameter: |VGS| ≥ 10V
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
-0.45
-0.5
-0.55
-0.6
-0.75
BSP 316 P
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , T = 25°C
-2 -10
-1 -10 -10 -10
BSP 316 P
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10
thJA
Preliminary dataBSP 316 P
5 Typ. output characteristicD = f (VDS)
parameter: Tj =25°C, -VGS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: Tj =25°C, -VGS
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0.5
1.5
2.5
3.5
8 Typ. forward transconductancefs = f(ID)
parameter: T =25°C
0.3
0.6
0.9
1.2
1.8
Preliminary dataBSP 316 P
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = -0.68 A, VGS = -10 V
0.5
1.5
2.5
3.5 BSP 316 P
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz, T10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-2 -10
-1 -10 -10 -10
BSP 316 P
