BSP296 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 100 - -GS ..
BSP297 ,SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
BSP297 ,SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
BSP300 ,SIPMOS Small-Signal TransistorBSP 300 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Avalanche rated• V = 2.0... ..
BSP300 ,SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 800 - -GS ..
BSP304A ,P-channel enhancement mode vertical D-MOS transistors
BZG05C27TR , Zener Diodes
BZG05C30 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP296
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level
. Vegan) = 0.8...2.0V
BSP 296
1 vpsosseo
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID Rosmn) Package Marking
BSP 296 100 V 1 A 0.8 n SOT-223 BSP 296
Type Ordering Code Tape and Reel Information
BSP 296 Q67000-S067 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 100 V
Drain-gate voltage VDGR
Rss = 20 kg) 100
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 42 ( 1
DC drain current, pulsed IDpulS
TA = 25 "C 4
Power dissipation Ptot W
TA = 25 ( 1.8
Data Sheet 05.99
Infineon BSP 296
technologies
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air Rth f 70 KNV
Thermal resistance, junction-soldering point 1) Rth f 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, T]: 25 ( 100 - -
Gate threshold voltage VGsah)
kss=rbs, ID = 1 mA 0.8 1.4 2
Zero gate voltage drain current IDSS
VDS=100V,VGS=0V,7]=25°C - 0.1 1 pA
VDS=100V,VGS=0V, Tj=125°C - 8 50
bbs=601/,vss=01/,h=25oc - - 100 nA
Gate-source leakage current IGSS nA
Vss=20V,bbs=0V - 10 100
Drain-Source on-state resistance RDS(0n) Q
VGs = 10 V, ID = 1 A - 0.55 0.8
Vss = 4.5 V, ID = 1 A - 0.95 1.4
Data Sheet 2 05.99
